Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.

Abstract: The present invention provides a light source module. The light source module includes a circuit board, a metal base, a plurality of LEDs, a plurality of bonding wires and a reflective layer. The metal base is arranged on the circuit board and has a bottom wall and a peripheral wall upwardly extending from the bottom wall. The bottom wall and the peripheral wall cooperatively define a recess. The bottom wall has a through groove exposing the circuit board. The LEDs are arranged on the bottom wall. The bonding wires electrically connect the LEDs to the circuit board through the through groove. The reflective layer is arranged in the through groove and seals the through groove. Therefore, the light source module has better heat dissipation effect and the overall illumination intensity of the light source module is increased.