Patents by Inventor Wan-Yu PENG

Wan-Yu PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method for forming the same
    Patent number: 11101177
    Abstract: A method for forming a semiconductor structure includes: providing a substrate; forming a stacked structure on the substrate; forming a barrier layer on a sidewall of the stacked structure; forming a first dielectric layer covering the barrier layer and the stacked structure; removing a portion of the first dielectric layer to expose an upper portion of the stacked structure; forming a metal layer covering the stacked structure and the first dielectric layer; performing an annealing process to react the metal layer with the stacked structure to form a metal silicide layer at the upper portion of the stacked structure; removing an unreacted portion of the metal layer; removing a portion of the barrier layer to form a recess above the barrier layer; and forming a second dielectric layer covering the metal silicide layer and the first dielectric layer to form air gaps on both sides of the stacked structure.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: August 24, 2021
    Assignee: WINBOND ELECTRONICS CORP.
    Inventors: Che-Jui Hsu, Chun-Sheng Lu, Ying-Fu Tung, Mao-Chang Yen, Wan-Yu Peng
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20210257257
    Abstract: A method for forming a semiconductor structure includes: providing a substrate; forming a stacked structure on the substrate; forming a barrier layer on a sidewall of the stacked structure; forming a first dielectric layer covering the barrier layer and the stacked structure; removing a portion of the first dielectric layer to expose an upper portion of the stacked structure; forming a metal layer covering the stacked structure and the first dielectric layer; performing an annealing process to react the metal layer with the stacked structure to form a metal silicide layer at the upper portion of the stacked structure; removing an unreacted portion of the metal layer; removing a portion of the barrier layer to form a recess above the barrier layer; and forming a second dielectric layer covering the metal silicide layer and the first dielectric layer to form air gaps on both sides of the stacked structure.
    Type: Application
    Filed: February 19, 2020
    Publication date: August 19, 2021
    Inventors: Che-Jui HSU, Chun-Sheng LU, Ying-Fu TUNG, Mao-Chang YEN, Wan-Yu PENG