Abstract: A low-power retention flip-flop is provided. The low-power retention flip-flop may include: a master latch configured to output an input signal based on first control signals; a slave latch configured to output the signal from the master latch based on second control signals; and a control logic configured to generate the first control signals based on a clock signal, and provide the generated first control signals to the master latch, and generate the second control signals based on the clock signal and a power down mode signal, and provide the generated second control signals to the slave latch.

Abstract: An eFuse one-time programmable (OTP) memory is provided. The eFuse OTP memory supports inter integrated circuit (I2C) communication, and an operation method thereof. The eFuse OTP memory includes: an eFuse intellectual property (IP) which data writes once and data reads multiple times for a plurality of addresses; and an I2C slave which communicates with an I2C master based on a serial clock line and a serial data line, and performs the data write and the data read to and from the eFuse IP.

Abstract: An eFuse one-time programmable (OTP) memory includes an eFuse intellectual property (IP) configured to perform one-time writing and multiple readings for a plurality of memory cells, and a serial interface (SI) logic configured to receive a clock signal and a trim signal from a master device, and perform data writing to, or reading from, the eFuse IP based on the clock signal and the trim signal. The trim signal includes a start signal, a mode signal configured for a write mode or a read mode, and control signals configured to read or write for each of a plurality of addresses corresponding to the plurality of memory cells.

Abstract: An eFuse one-time programmable (OTP) memory is provided. The eFuse OTP memory supports inter integrated circuit (12C) communication, and an operation method thereof. The eFuse OTP memory includes: an eFuse intellectual property (IP) which data writes once and data reads multiple times for a plurality of addresses; and an 12C slave which communicates with an 12C master based on a serial clock line and a serial data line, and performs the data write and the data read to and from the eFuse IP.

Abstract: A low-power retention flip-flop is provided. The low-power retention flip-flop may include: a master latch configured to output an input signal based on first control signals; a slave latch configured to output the signal from the master latch based on second control signals; and a control logic configured to generate the first control signals based on a clock signal, and provide the generated first control signals to the master latch, and generate the second control signals based on the clock signal and a power down mode signal, and provide the generated second control signals to the slave latch.

Abstract: A tie-high circuit includes: a p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library; and a decoupling capacitor connected to a ground rail in the standard cell library and the PMOS transistor. The decoupling capacitor includes an n-type metal-oxide-semiconductor (NMOS) transistor having either one of a source and a drain of the NMOS transistor being connected to the ground rail via an active resistor. A tie-low circuit includes: an n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in a standard cell library; and a decoupling capacitor connected to a power rail in the standard cell library and the NMOS transistor. The decoupling capacitor of the tie-low circuit includes a PMOS transistor having either one of a source and a drain of the PMOS transistor being connected to the power rail via an active resistor.

Abstract: A decoupling capacitor includes a first p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library, a first n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in the standard cell library, a second PMOS transistor connected between the first NMOS transistor and the power rail, and a second NMOS transistor connected between the first PMOS transistor and the ground rail, wherein a gate of the second PMOS transistor is connected to a gate of the second NMOS transistor.

Abstract: A decoupling capacitor includes a first p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library, a first n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in the standard cell library, a second PMOS transistor connected between the first NMOS transistor and the power rail, and a second NMOS transistor connected between the first PMOS transistor and the ground rail, wherein a gate of the second PMOS transistor is connected to a gate of the second NMOS transistor.

Abstract: A tie-high circuit includes: a p-type metal-oxide-semiconductor (PMOS) transistor connected to a power rail in a standard cell library; and a decoupling capacitor connected to a ground rail in the standard cell library and the PMOS transistor, wherein the decoupling capacitor comprises an n-type metal-oxide-semiconductor (NMOS) transistor having a source and a drain, either one of the source and the drain of the NMOS transistor being connected to the ground rail via an active resistor. A tie-low circuit includes: an n-type metal-oxide-semiconductor (NMOS) transistor connected to a ground rail in a standard cell library; and a decoupling capacitor connected to a power rail in the standard cell library and the NMOS transistor, wherein the decoupling capacitor comprises a p-type metal-oxide-semiconductor (PMOS) transistor having a source and a drain, either one of the source and the drain of the PMOS transistor being connected to the power rail via an active resistor.