Patents by Inventor Wanda Andreoni
Wanda Andreoni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11908963Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.Type: GrantFiled: May 23, 2013Date of Patent: February 20, 2024Assignees: INTERNATIONA BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTERInventors: Wanda Andreoni, Alessandro Curioni, Petr Khomyakov, Jeehwan Kim, Devendra K. Sadana, Nasser D. Afify
-
Patent number: 8927857Abstract: A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.Type: GrantFiled: February 28, 2011Date of Patent: January 6, 2015Assignee: International Business Machines CorporationInventors: Ahmed Abou-Kandil, Nasser Afify, Wanda Andreoni, Alessandro Curioni, Augustin J. Hong, Jeehwan Kim, Petr Khomyakov, Devendra K. Sadana
-
Publication number: 20130312828Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.Type: ApplicationFiled: May 23, 2013Publication date: November 28, 2013Inventors: Nasser D. Afify, Wanda Andreoni, Alessandro Curioni, Petr Khomyakov, Jeehwan Kim, Devendra K. Sadana
-
Patent number: 8273618Abstract: A method of forming a high-K gate stack for a MOSFET device to control the threshold voltage for the MOSFET device. A first high-K metallic oxide layer is formed on a semiconductor substrate. At least one composite layer is then formed directly on the first layer. The composite layer is composed of a second high-K metallic oxide layer formed directly on a dipole induction layer. The dipole induction layer includes a high-K metallic oxide having higher oxygen vacancy affinity and lower oxygen vacancy diffusivity than the first and second layers. A metallic gate electrode is then formed on the composite layer. Formation of the various layers is such as to position the dipole induction layer of the composite layer between the gate electrode and substrate so as to shift the threshold voltage to a desired level. A high-K gate stack in a MOSFET device formed by the above method is also provided.Type: GrantFiled: December 15, 2009Date of Patent: September 25, 2012Assignee: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro Curioni, Carlo A. Pignedoli
-
Publication number: 20120216862Abstract: A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.Type: ApplicationFiled: February 28, 2011Publication date: August 30, 2012Applicant: International Business Machines CorporationInventors: Ahmed Abou-Kandil, Nasser Afify, Wanda Andreoni, Alessandro Curioni, Augustin J. Hong, Jeehwan Kim, Petr Khomyakov, Devendra K. Sadana
-
Patent number: 8153514Abstract: The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.Type: GrantFiled: August 7, 2008Date of Patent: April 10, 2012Assignee: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic, Evgeni Gousev, Michael A. Gribelyuk, Paul C. Jamison, Rajarao Jammy, Dianne L. Lacey, Fenton R. McFeely, Vijay Narayanan, Carlo A. Pignedoli, Joseph F. Shepard, Jr., Sufi Zafar
-
Publication number: 20100171187Abstract: A method of forming a high-K gate stack for a MOSFET device to control the threshold voltage for the MOSFET device. A first high-K metallic oxide layer is formed on a semiconductor substrate. At least one composite layer is then formed directly on the first layer. The composite layer is composed of a second high-K metallic oxide layer formed directly on a dipole induction layer. The dipole induction layer includes a high-K metallic oxide having higher oxygen vacancy affinity and lower oxygen vacancy diffusivity than the first and second layers. A metallic gate electrode is then formed on the composite layer. Formation of the various layers is such as to position the dipole induction layer of the composite layer between the gate electrode and substrate so as to shift the threshold voltage to a desired level. A high-K gate stack in a MOSFET device formed by the above method is also provided.Type: ApplicationFiled: December 15, 2009Publication date: July 8, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wanda Andreoni, Alessandro Curioni, Carlo A. Pignedoli
-
Publication number: 20080293259Abstract: The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.Type: ApplicationFiled: August 7, 2008Publication date: November 27, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic, Evgeni Gousev, Michael A. Gribelyuk, Paul C. Jamison, Rajarao Jammy, Dianne L. Lacey, Fenton R. McFeely, Vijay Narayanan, Carlo A. Pignedoli, Joseph F. Shepard, JR., Sufi Zafar
-
Publication number: 20060289903Abstract: The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.Type: ApplicationFiled: August 30, 2006Publication date: December 28, 2006Inventors: Wanda Andreoni, Alessandro Callegari, Eduard Cartier, Alessandro Curioni, Christopher D'Emic, Evgeni Gousev, Michael Gribelyuk, Paul Jamison, Rajarao Jammy, Dianne Lacey, Fenton McFeely, Vijay Narayanan, Carlo Pignedoli, Joseph Shepard, Sufi Zafar
-
Patent number: 7115959Abstract: The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.Type: GrantFiled: June 22, 2004Date of Patent: October 3, 2006Assignee: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro C. Callegari, Eduard A. Cartier, Alessandro Curioni, Christopher P. D'Emic, Evengi Gousev, Michael A. Gribelyuk, Paul C. Jamison, Rajarao Jammy, Dianne L. Lacey, Fenton R. McFeely, Vijay Narayanan, Carlo A. Pignedoli, Joseph P. Shepard, Jr., Sufi Zafar
-
Patent number: 7057244Abstract: An article of manufacture comprises a substrate and a layer of N(x)Y(1?x)AlO3 on the substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. The article may be an electronic device further comprising an electrode electrically isolated from the substrate by the layer. In particular, the dielectric properties of the layer are such that the layer is especially although by no means exclusively useful for electrically isolating gate electrodes in field effect transistor devices. The layer may be formed on the substrate via molecular beam epitaxy.Type: GrantFiled: July 21, 2003Date of Patent: June 6, 2006Assignee: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro Curioni, Stephen A. Shevlin
-
Publication number: 20050280105Abstract: The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.Type: ApplicationFiled: June 22, 2004Publication date: December 22, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wanda Andreoni, Alessandro Callegari, Eduard Cartier, Alessandro Curioni, Christopher D'Emic, Evengi Gousev, Michael Gribelyuk, Paul Jamison, Rajarao Jammy, Dianne Lacey, Fenton McFeely, Vijay Narayanan, Carlo Pignedoli, Joseph Shepard, Sufi Zafar
-
Patent number: 6844087Abstract: A material is provided that can be used for a light-emitting device. The base unit of said material is tris(8-quinolinolato)aluminum(III) (Alq3). This Alq3 is substituted in the said 3- or 4-position with an electron-donor group and simultaneously in the said 5-position with an electro-acceptor or p-delocalizing group. Using this material as an emitting luminescent layer, the efficiency of the intrinsic luminescence can be greatly enhanced.Type: GrantFiled: July 11, 2000Date of Patent: January 18, 2005Assignee: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro Curioni
-
Publication number: 20040077177Abstract: An article of manufacture comprises a substrate and a layer of N(x)Y(1-x)AIO3 on the substrate where x is a molar fraction greater than zero and less than one, and N is an element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. The article may be an electronic device further comprising an electrode electrically isolated from the substrate by the layer. In particular, the dielectric properties of the layer are such that the layer is especially although by no means exclusively useful for electrically isolating gate electrodes in field effect transistor devices. The layer may be formed on the substrate via molecular beam epitaxy.Type: ApplicationFiled: July 21, 2003Publication date: April 22, 2004Applicant: International Business Machines CorporationInventors: Wanda Andreoni, Alessandro Curioni, Stephen A. Shevlin