Abstract: A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

Abstract: A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.

Abstract: A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

Abstract: Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 ? to 6000 ?; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Abstract: The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precurso

Abstract: A manufacturing method of an array substrate and a display panel are disclosed. The manufacturing method includes: disposing a photoresist on an active switch; disposing a protective layer on the active switch; disposing a pixel electrode layer on the protective layer. The step of etching each film layer material based on the photoresist to form an active switch includes: performing a first wet etching on the active switch; performing a first dry etching and two ashing treatments on the active switch; performing a second wet etching on the active switch; and removing the photoresist. The present application can improve the issue of photoresist residues.

Abstract: A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.

Abstract: The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precurso

Abstract: Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 ? to 6000 ?; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.