Abstract: A silicon carbide (SiC) static induction transistor (SIT) includes a source, a gate disposed over the source and receiving a control signal, a drain disposed over the recessed gate and generating an output signal, an epitaxial pattern disposed between the source and the drain and including a protruding portion, and a gate bus electrically coupled to the gate and including carbon. A method of forming an SiC SIT transistor device includes providing a substrate including a source doped with dopants of a first conductivity type, forming an epitaxial pattern including a protruding portion over the source, forming a recessed gate over the source, forming a gate bus over the recessed gate, forming a drain over the gate bus and the epitaxial pattern, and forming a first heatsink over the drain.

Abstract: A surface acoustic wave (SAW) triplexer receives radio frequency signals in three bands and provides output signal components for PCS, GPS, and cellular signal processing ports. The triplexer includes low pass filter and a high pass network operating with an antenna terminal for reception and separation of an incoming signal in a low and high frequency bands, and a SAW filter connected to the input terminal for reception and separation of the incoming signal within a frequency band located between that of the low and the high bands. A low insertion loss bandpass filter is provided by the SAW filter having a transducer and reflectors fabricated on a piezoelectric substrate.

Abstract: A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).

Abstract: A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).

Abstract: An integrated filter circuit and a method of fabrication are disclosed, wherein the integrated filter has an input and an output parasitic shunt impedance. Input and output electrical components are coupled to the input and output terminals, respectively, to reduce the input and output parasitic shunt impedances. The input and output electrical components each include one of a coil, a section of transmission line, a coil and tuneable capacitance connected in a series tuned circuit, or a coil and tuneable capacitance connected in a parallel tuned circuit.

Abstract: A power amplifier includes a carrier amplifier path and a peaking amplifier path. The carrier amplifier path includes a carrier amplifier (208), and an impedance transforming network (214). The peaking amplifier path includes a peaking amplifier (210), an impedance transforming network (216), and a phase delay quarter wave element (226). The arrangement forms an inverted Doherty combiner where as the nominal impedance at a summing node (230) increases with increased conduction from the peaking amplifier, the load impedance at the output of the carrier amplifier decreases so as to maintain the carrier amplifier at a saturation point as the input signal (232) increases, and results in a reduction of the number of phase delay elements needed over a conventional Doherty approach. In a preferred embodiment the carrier and peaking amplifiers consist of cascaded stages, and are disposed on a common integrated circuit die (304).

Abstract: A high Q multi-layer ceramic transmission line resonator (100) used for RF applications. The resonator (100) includes a plurality of strips (102) which are separated by a ceramic substrate (104). Each of the strips are interconnected using vias (110) passing through the ceramic substrate (104). The invention utilizes current manufacturing processes to fabricate an equivalent thick center conductor to effectively increase the Q factor. This allows for the resonator to be used in miniature RF communication devices utilized in high tier devices such as voltage controlled oscillators (VCOs) or integrated filter circuits.

Abstract: A transmission line device (200) employs a first ground plane (118) that is disposed on a first dielectric substrate (202). A first conductive layer (210) that encloses a first area (213)is disposed on a second dielectric substrate (206), which substrate is positioned substantially adjacent to the first dielectric substrate (202). A second conductive layer (211) that encloses an area corresponding to the first area (213) is disposed on a third dielectric substrate (207), which substrate is positioned substantially adjacent to the second dielectric substrate (206). A coil structure is thereby provided that can be employed in the fabrication of a transmission line device, according to the invention.

Abstract: An electrical circuit (400) includes a first input means (401) for providing an input signal, a first output means (406) for providing an output signal, and a transmission line device (405) electrically positioned between the first input means (401) and the first output means (406). The first transmission line device includes a first ground plane (409) disposed on a first dielectric substrate (402), a first conductive layer (405-1) enclosing a first area on a second dielectric substrate (403) that is positioned substantially adjacent to the first dielectric substrate (402). The transmission line device (405) further includes a second conductive layer (405-2) that encloses an area corresponding to the first area on a first major surface of a third dielectric substrate (404) that is positioned substantially adjacent to the second dielectric substrate.

Abstract: An electrical circuit (500) includes an input means (503) for providing an input signal, an output means for providing an output signal, and a transmission line device (421) disposed substantially between the input means (503) and the output means. The transmission line device inludes a first ground plane (505) disposed on a first dielectric substrate (502), and a first conductive layer (421-1) disposed, and enclosing a first area, on a second dielectric substrate (506) that is positioned substantially adjacent to the first dielectric substrate (502). The transmission line device (421) further includes a second conductive layer (421-2) that encloses an area corresponding to the first area on a first major surface of a third dielectric substrate (504) that is positioned substantially adjacent to the second dielectric substrate (506).