Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: A method of manufacturing a reticle includes: disposing the reticle in a reticle pod, the reticle pod forming a sealed space to accommodate the reticle, and the reticle pod comprising a window arranged on an upper surface of the reticle pod and configured to allow a radiation at a predetermined wavelength to pass through; and performing an inspection operation on the reticle through the window.

Abstract: A method of manufacturing a reticle includes: disposing the reticle in a reticle pod, the reticle pod forming a sealed space to accommodate the reticle, and the reticle pod comprising a window arranged on an upper surface of the reticle pod and configured to allow a radiation at a predetermined wavelength to pass through; and performing an inspection operation on the reticle through the window.

Abstract: The structure and methods of a reticle pod are provided. A reticle pod includes a base configured to support a reticle and a cover detachably coupled to the base. The cover includes a window that allows radiation at a wavelength between about 400 nm and about 700 nm to pass through with a transmittance of greater than 70%.

Abstract: A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.

Abstract: The structure and methods of a reticle pod are provided. A reticle pod includes a base configured to support a reticle and a cover detachably coupled to the base. The cover includes a window that allows radiation at a wavelength between about 400 nm and about 700 nm to pass through with a transmittance of greater than 70%.

Abstract: A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.

Abstract: A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.