Patents by Inventor Wang-Chun Huang
Wang-Chun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250098219Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.Type: ApplicationFiled: February 15, 2024Publication date: March 20, 2025Inventors: Jung-Hung CHANG, Shih-Cheng CHEN, Tsung-Han CHUANG, Fu-Cheng CHANG, Wen-Ting LAN, Chia-Cheng TSAI, Kuo-Cheng CHIANG, Chih-Hao WANG, Wang-Chun Huang, Shi-Syuan Huang
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Publication number: 20250063809Abstract: The present disclosure describes a structure including a fin field effect transistor (finFET) and a nano-sheet transistor on a substrate and a method of forming the structure. The method can include forming first and second vertical structures over a substrate, where each of the first and the second vertical structures can include a buffer region and a first channel layer formed over the buffer region. The method can further include disposing a masking layer over the first channel layer of the first and second vertical structures, removing a portion of the first vertical structure to form a first recess, forming a second channel layer in the first recess, forming a second recess in the second channel layer, and disposing an insulating layer in the second recess.Type: ApplicationFiled: November 7, 2024Publication date: February 20, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wang-Chun Huang, Chih-Hao Wang, Ching-Wei Tsai, Kuan-Lun Cheng
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Patent number: 12218224Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes at least one first semiconductor element and at least one second semiconductor element over a substrate, a dielectric fin disposed between the at least one first semiconductor element and the at least one second semiconductor element, a first work function metal layer wrapping around each of the at least one first semiconductor element and extending continuously from the at least one first semiconductor element to a top surface of the dielectric fin, and a second work function metal layer disposed over the at least one second semiconductor element and the first work function metal layer.Type: GrantFiled: August 10, 2022Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wang-Chun Huang, Hou-Yu Chen, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 12199095Abstract: The present disclosure describes a structure including a fin field effect transistor (finFET) and a nano-sheet transistor on a substrate and a method of forming the structure. The method can include forming first and second vertical structures over a substrate, where each of the first and the second vertical structures can include a buffer region and a first channel layer formed over the buffer region. The method can further include disposing a masking layer over the first channel layer of the first and second vertical structures, removing a portion of the first vertical structure to form a first recess, forming a second channel layer in the first recess, forming a second recess in the second channel layer, and disposing an insulating layer in the second recess.Type: GrantFiled: October 18, 2021Date of Patent: January 14, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wang-Chun Huang, Chih-Hao Wang, Ching-Wei Tsai, Kuan-Lun Cheng
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Publication number: 20240395861Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes channel layers, a mask structure, a gate structure and a source/drain pattern. The channel layers are stacked vertically apart along a first direction over a substrate. The mask structure is disposed over and apart from the channel layers along the first direction. The gate structure laterally extends along a second direction perpendicular to the first direction disposed, wherein the gate structure wraps around the channel layers and laterally surround the mask structure. The source/drain pattern is in contact with the channel layers.Type: ApplicationFiled: May 24, 2023Publication date: November 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Yu Wang, Wang-Chun Huang, Cheng-Ting Chung, Yi-Bo Liao
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Publication number: 20240387683Abstract: A semiconductor device includes a substrate, two source/drain (S/D) regions over the substrate, a channel region between the two S/D regions and including a semiconductor material, a deposited capacitor material (DCM) layer over the channel region a dielectric layer over the DCM layer and a metallic gate electrode layer over the dielectric layer.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: Wang-Chun Huang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 12148811Abstract: A method includes providing first and second structures over a substrate, wherein each of the first and second structures includes source/drain (S/D) regions, a channel region between the S/D regions, a sacrificial dielectric layer, and a sacrificial gate. The method further includes partially recessing the sacrificial gate without exposing the sacrificial dielectric layer in each of the first and the second structures; forming a first patterned mask that covers the first structure; removing the sacrificial gate from the second structure; removing the first patterned mask and the sacrificial dielectric layer from the second structure; and depositing a layer of a capacitor material over the portion of the sacrificial gate in the first structure and over the channel region in the second structure.Type: GrantFiled: July 5, 2022Date of Patent: November 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wang-Chun Huang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20240363702Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.Type: ApplicationFiled: July 11, 2024Publication date: October 31, 2024Inventors: Yu-Xuan Huang, Wang-Chun Huang, Yi-Bo Liao, Cheng-Ting Chung, Hou-Yu Chen, Kuan-Lun Cheng, Wei Ju Lee
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Publication number: 20240322013Abstract: A method for manufacturing a semiconductor structure includes forming first and second channel layers over a substrate, forming first source/drain features over the first and second channel layers, forming a gate dielectric layer wrapping around the first and second channel layers, forming a first work function layer wrapping around the gate dielectric layer, forming a hard mask layer wrapping around the first work function layer, removing portions of the hard mask layer and the first work function layer, removing the hard mask layer and the first work function layer wrapping around the second channel layer, removing the hard mask layer wrapping around the first channel layer, forming a second work function layer wrapping around the first work function layer and the second channel layer, forming a metal material between the second work function layer, and forming second source/drain features under the first and second channel layers.Type: ApplicationFiled: March 23, 2023Publication date: September 26, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Fu LU, Chih-Hao Wang, Wang-Chun Huang, Kuo-Cheng Chiang, Mao-Lin Huang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu
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Patent number: 12094938Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a semiconductor substrate, a stack of semiconductor layers over the semiconductor substrate, a gate structure over and between the stack of semiconductor layers, where the gate structure engages with the stack of semiconductor layers. Moreover, the device also includes a silicide layer extending along sidewall surfaces of the stack of semiconductor layers, and a source/drain feature on a sidewall surface of the silicide layer.Type: GrantFiled: August 30, 2021Date of Patent: September 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Xuan Huang, Wang-Chun Huang, Yi-Bo Liao, Cheng-Ting Chung, Hou-Yu Chen, Kuan-Lun Cheng, Wei Ju Lee
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Patent number: 12062714Abstract: An integrated circuit (IC) structure with a nanowire power switch device and a method of forming the IC structure are disclosed. The IC structure includes a front end of line (FEOL) device layer having a plurality of active devices, a first back end of line (BEOL) interconnect structure on the (FEOL) device layer, and a nanowire switch on the first BEOL interconnect structure. A first end of the nanowire switch is connected to an active device of the plurality of active devices through the first BEOL interconnect structure. The IC structure further includes a second BEOL interconnect structure on the nanowire switch. A second end of the nanowire switch is connected to a power source through the second BEOL interconnect structure and the second end is opposite to the first end.Type: GrantFiled: February 6, 2023Date of Patent: August 13, 2024Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.Inventors: Li-Yang Chuang, Ching-Wei Tsai, Wang-Chun Huang, Kuan-Lun Cheng
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Publication number: 20240243126Abstract: A device includes a channel layer, a gate structure, a first source/drain structure, a second source/drain structure, and a backside via. The gate structure surrounds the channel layer. The first source/drain structure and the second source/drain structure ate connected to the channel layer. The backside via is connected to a backside of the first source/drain structure. The backside via includes a first portion, a second portion, and a third portion. The first portion is connected to the backside of the first source/drain structure. The third portion tapers from the second portion to the first portion. A sidewall of the third portion is more inclined than a sidewall of the second portion.Type: ApplicationFiled: March 26, 2024Publication date: July 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wang-Chun HUANG, Hou-Yu CHEN, Kuan-Lun CHENG, Chih-Hao WANG
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Publication number: 20240178052Abstract: A semiconductor structure includes a substrate, a first gate structure and a second gate structure disposed over the substrate, and an isolation feature extending through the substrate and disposed between the first gate structure and the second gate structure. A top surface of the isolation feature is above a topmost surface of the first gate structure.Type: ApplicationFiled: February 5, 2024Publication date: May 30, 2024Inventors: Wang-Chun HUANG, Yu-Xuan HUANG, Hou-Yu CHEN, Chih-Hao WANG, Kuan-Lun CHENG
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Patent number: 11973077Abstract: A device includes a transistor, a backside via, and a pair of sidewall spacers. The transistor includes a gate structure, a channel layer surrounded by the gate structure, and a first source/drain structure and a second source/drain structure connected to the channel layer. The backside via is under and connected to the first source/drain structure and includes a first portion, a second portion between the first portion and the first source/drain structure, and a third portion tapering from the first portion to the second portion in a cross-sectional view. The pair of sidewall spacers are on opposite sidewalls of the second portion of the backside via but not on opposite sidewalls of the first portion of the backside via.Type: GrantFiled: April 21, 2023Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wang-Chun Huang, Hou-Yu Chen, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20240096979Abstract: A method for forming a semiconductor structure is provided. The method includes forming a fin structure protruding from a substrate. The fin structure includes alternately stacked first semiconductor material layers and second semiconductor material layers. The method includes forming a spacer layer over the fin structure. The method includes forming a first inter-layer dielectric (ILD) layer over the spacer layer. The method also includes recessing the fin structure and the first ILD layer to form a first opening through the first ILD layer. The method further includes forming an epitaxial structure in the first opening, and forming a second ILD layer over the epitaxial structure and the first ILD layer. In addition, the method includes removing the first semiconductor material layers, and forming a gate structure around the second semiconductor material layers.Type: ApplicationFiled: January 11, 2023Publication date: March 21, 2024Inventor: Wang-Chun HUANG
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Publication number: 20240079277Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate, an isolation layer, a gate stack structure, and a dielectric layer. The method includes partially removing the gate stack structure to form a first trench in the gate stack structure. The method includes forming an isolation structure in the first trench. The method includes removing the first gate stack and the second gate stack to form a first recess and a second recess in the dielectric layer. The method includes forming an n-type gate stack and a p-type gate stack in the first recess and the second recess respectively. The method includes forming a conductive line over the n-type gate stack, the p-type gate stack, and the isolation structure. The conductive line electrically connects the n-type gate stack to the p-type gate stack.Type: ApplicationFiled: January 10, 2023Publication date: March 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wang-Chun HUANG, Pei-Yu WANG
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Patent number: 11901365Abstract: A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.Type: GrantFiled: May 4, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wang-Chun Huang, Kai-Chieh Yang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11894260Abstract: A semiconductor structure includes a gate structure surrounding a plurality of channels and a cut feature that electrically isolates two separate portions of the gate structure. The cut feature comprises an outer layer having a work-function metal, and an inner layer comprising a dielectric material. The cut feature extends above a top surface of the gate structure.Type: GrantFiled: August 9, 2022Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Wang-Chun Huang, Yu-Xuan Huang, Hou-Yu Chen, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20230387261Abstract: A semiconductor device includes semiconductor nanosheets, a gate structure, and a dielectric spacer. The semiconductor nanosheets are vertically stacked over each other, disposed above a semiconductor substrate, and serve as channel regions. A bottommost semiconductor nanosheet most proximate from the semiconductor substrate is a thinnest nanosheet of the semiconductor nanosheets. The gate structure surrounds each of the semiconductor nanosheets in a first cross-section, and the dielectric spacer is interposed between the bottommost semiconductor nanosheet and the semiconductor substrate and adjoins the gate structure in the first cross-section.Type: ApplicationFiled: May 27, 2022Publication date: November 30, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wang-Chun Huang, Hou-Yu Chen, Jin Cai, Chih-Hao Wang
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Publication number: 20230369466Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes at least one first semiconductor element and at least one second semiconductor element over a substrate, a dielectric fin disposed between the at least one first semiconductor element and the at least one second semiconductor element, a first work function metal layer wrapping around each of the at least one first semiconductor element and extending continuously from the at least one first semiconductor element to a top surface of the dielectric fin, and a second work function metal layer disposed over the at least one second semiconductor element and the first work function metal layer.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Inventors: Wang-Chun Huang, Hou-Yu Chen, Kuan-Lun Cheng, Chih-Hao Wang