Abstract: In one example, a device includes a redistribution layer (RDL) substrate comprising a first side and a second side opposite the first side. A wafer component can be coupled to the first side of the RDL substrate. A first bond interface can be disposed between the wafer component and the RDL substrate. The first bond interface can be provided by a first hybrid bond. An electronic component can be coupled to the second side of the RDL substrate. A second bond interface can be disposed between the electronic component and the RDL substrate. The second bond interface can be within a footprint of the first bond interface and can be provided by a second hybrid bond. A vertical interconnect can be disposed lateral to a sidewall of the electronic component. The vertical interconnect can be coupled to the RDL substrate. Other examples and related methods are also disclosed herein.

Abstract: A method of manufacturing an electronic device may include providing alignment conductive pads and internal interconnects along an upper side of a first carrier and coupling alignment interconnects of a connect component to the alignment conductive pads. The method also includes encapsulating the connect component and the internal interconnects in a lower encapsulant, and covering an upper side of the lower encapsulant with an upper substrate. The method also includes coupling, via the upper substrate, first interconnects of a first electronic component and a second electronic component to the connect component interconnects and second interconnects of the first electronic component and the second electronic component to the internal interconnects. The method further includes removing the first carrier from a lower side of the lower encapsulant, and covering the lower side of the lower encapsulant with a lower substrate. Other examples and related electronic devices are also disclosed herein.

Abstract: An example method of manufacturing an electronic device can include providing a device wafer including an active region comprising a front-end-of-line (FEOL) region opposite a back-end-of-line (BEOL) region. The FEOL region can include buried power rails, and the BEOL region can include a dielectric structure having a side exposed from the BEOL region. A support substrate having a substrate dielectric can be coupled to the dielectric structure. A bond interface is disposed between the substrate dielectric and the dielectric structure. A passivation structure can be provided over the FEOL region. Conductive vias can be provided through the passivation structure. The conductive vias can include a conductor coupled to the buried power rails. A substrate can be coupled to the passivation structure. The substrate can include a power network electrically coupled to the conductive vias.

Abstract: In one example, an electronic device can include an active region comprising a channel region. A first isolation region may be disposed at a lateral side of the channel region. A source region may be located in a footprint of the channel region and disposed between the channel region and the first isolation region. A device passivation can cover a side of the channel region opposite the source region and disposed on a lateral side of the first isolation region. A substrate passivation can be coupled to the device passivation. A bond interface can be disposed between the device passivation and the substrate passivation. A substrate can be coupled to the substrate passivation. Other examples and related methods are also disclosed herein.

Abstract: A method of manufacturing an electronic device includes providing vertical interconnects over a first carrier and bonding an inorganic layer of a routing component to an inorganic layer of the first carrier. The method also includes encapsulating the vertical interconnects and the routing component in a lower encapsulant and providing an upper substrate such that a conductive structure of the upper substrate is coupled to the vertical interconnects and to an upper side of the routing component. The method further includes coupling a first electronic component and a second electronic component to the upper substrate and providing a second carrier over the first electronic component and the second electronic component. The method may also include removing the first carrier and providing a lower substrate such that a conductive structure of the lower substrate is coupled to the vertical interconnects. Other methods and related electronic devices are also disclosed.

Abstract: In one example, a redistribution structure is provided and comprises a substrate interconnect. A portion of a first capping layer is removed to expose a side of the substrate interconnect. The side of the substrate interconnect is recessed by a dishing height from a side of the first capping layer. An electronic component is provided over the first capping layer. The electronic component comprises a second capping layer and a component interconnect. The second capping layer is bonded with the first capping layer. Heat is applied to bond the substrate interconnect to the component interconnect. Other examples and related devices and methods are also disclosed herein.

Abstract: In one example, a semiconductor device includes a substrate comprising a conductive structure including internal terminals over a substrate first side and external terminals over a substrate second side coupled to the internal terminals. An electronic component includes an electronic component first side, an electronic component second side opposite to the electronic component first side, and an electronic component lateral side connecting the electronic component first side to the electronic component second side. The electronic component second side is coupled to one or more of the internal terminals. A guide structure is over the substrate first side and can include an inner portion that is laterally inward from the electronic component lateral side and an outer portion that is laterally outward from the electronic component lateral side. An underfill is interposed between the electronic component second side and the substrate first side and is over the guide structure.

Abstract: In one example, an electronic device, comprises a first component comprising a first component inner side and a first component backside, a first component inner terminal, a first component dielectric at the first component inner side, and a first component interconnect coupled with the first component inner terminal. The electronic device comprises a second component over the first component and comprising a second component inner side facing the first component inner side, and a second component backside, a second component inner terminal, a second component dielectric at the second component inner side, and a second component interconnect coupled with the second component inner terminal. The first component dielectric and the second component dielectric comprise an inorganic material, the first component dielectric is coupled with the second component dielectric, and the first component interconnect is coupled with the second component interconnect.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: In one example, a semiconductor device includes a substrate comprising a conductive structure including internal terminals over a substrate first side and external terminals over a substrate second side coupled to the internal terminals. An electronic component includes an electronic component first side, an electronic component second side opposite to the electronic component first side, and an electronic component lateral side connecting the electronic component first side to the electronic component second side. The electronic component second side is coupled to one or more of the internal terminals. A guide structure is over the substrate first side and can include an inner portion that is laterally inward from the electronic component lateral side and an outer portion that is laterally outward from the electronic component lateral side. An underfill is interposed between the electronic component second side and the substrate first side and is over the guide structure.

Abstract: In one example, a semiconductor device includes a substrate having a substrate first side, a substrate second side opposite to the substrate first side, and a conductive structure including internal terminals over the substrate first side; and external terminals over the substrate second side and coupled to the internal terminals. An electronic component includes an electronic component first side, an electronic component second side opposite to the electronic component first side, and an electronic component lateral side connecting the electronic component first side to the electronic component second side. The electronic component second side is coupled to one or more of the internal terminals. A guide structure is over the substrate first side and can include an inner portion that is laterally inward from the electronic component lateral side and an outer portion that is laterally outward from the electronic component lateral side.

Abstract: In one example, a semiconductor device includes a substrate having a substrate first side, a substrate second side opposite to the substrate first side, and a conductive structure including internal terminals over the substrate first side; and external terminals over the substrate second side and coupled to the internal terminals. An electronic component includes an electronic component first side, an electronic component second side opposite to the electronic component first side, and an electronic component lateral side connecting the electronic component first side to the electronic component second side. The electronic component second side is coupled to one or more of the internal terminals. A guide structure is over the substrate first side and can include an inner portion that is laterally inward from the electronic component lateral side and an outer portion that is laterally outward from the electronic component lateral side.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A semiconductor package and a manufacturing method thereof, which can reduce the size of the semiconductor package and improve product reliability. In a non-limiting example embodiment, the method may comprise forming an interposer on a wafer, forming at least one reinforcement member on the interposer, coupling and electrically connecting at least one semiconductor die to the interposer to the interposer, filling a region between the semiconductor die and the interposer with an underfill, and encapsulating the reinforcement member, the semiconductor die and the underfill on the interposer using an encapsulant.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.