Patents by Inventor Wang Haiting

Wang Haiting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device to achieve self-stop and precise gate height
    Patent number: 8962407
    Abstract: A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: February 24, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Hong Yu, Wang Haiting, Yongsik Moon, James Lee, Huang Liu
  • METHOD AND DEVICE TO ACHIEVE SELF-STOP AND PRECISE GATE HEIGHT
    Publication number: 20140061732
    Abstract: A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Hong Yu, Wang Haiting, Yongsik Moon, James Lee, Huang Liu