Abstract: The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.

Abstract: A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.

Abstract: System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.

Abstract: The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling arte, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor waders.

Abstract: System and method for implementing wafer acceptance test (“WAT”) advanced process control (“APC”) are described. In one embodiment, the method comprises performing an inter-metal (“IM”) WAT on a plurality of processed wafer lots; selecting a subset of the plurality of wafer lots using a lot sampling process; and selecting a sample wafer group using the wafer lot subset, wherein IM WAT is performed on wafers of the sample wafer group to obtain IM WAT data therefore. The method further comprises estimating final WAT data for all wafers in the processed wafer lots from IM WAT data obtained for the sample wafer group and providing the estimated final WAT data to a WAT APC process for controlling processes.

Abstract: A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.