Abstract: The present disclosure discloses a substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam transmitting plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a VCSEL beam having a single wavelength to a lower surface of the flat substrate through the beam transmitting plate; and an temperature measuring module configured to measure the laser beam reflected from the lower surface or an upper surface the flat substrate, thereby measuring the temperature of the flat substrate.

Abstract: The present disclosure discloses a substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam transmitting plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a VCSEL beam having a single wavelength to a lower surface of the flat substrate through the beam transmitting plate; and an emissivity measuring configured to measure the laser beam reflected from the lower surface or an upper surface the flat substrate, thereby measuring the emissivity of the flat substrate.

Abstract: The present disclosure provides substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam irradiating plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a laser beam to a lower surface of the flat substrate through the beam irradiating plate; and a gas circulation cooling module for spraying a cooling gas to an upper surface of the infrared transmitting plate, thereby cooling the infrared transmitting plate.

Abstract: The present disclosure discloses a flat substrate heating apparatus including a module support plate having a plurality of unit module regions placed on an upper surface thereof; a plurality of laser light source modules having a plurality of laser light source devices and seated on unit module regions of the module support plate, respectively; a power supply board placed below the module support plate and configured to supply power to the laser light source module; and an electrode terminal electrically connecting the laser light source module and the power supply board while detachably securing them to upper and lower surfaces of the module support plate.

Abstract: The present disclosure discloses a substrate heat-treatment apparatus using a VCSEL element, the substrate heat-treatment apparatus comprising: a process chamber in which a flat plate substrate to be heat-treated is mounted; and an irradiation module for irradiating a laser beam onto the flat plate substrate, the irradiation module including a sub-irradiation module which includes an element array plate, an element area which is mounted on an upper surface of the element array plate and on which the VCSEL element is mounted, and a terminal area on which an electrode terminal is mounted and which is located at the front or rear side of the element area, wherein, in the irradiation module, the element area and the terminal area are respectively arranged in the x-axis direction, and the element area and the terminal area are alternately arranged along the y-axis direction perpendicular to the x-axis direction.

Abstract: Disclosed is a heat treatment system for semiconductor devices. The heat treatment system is used in a heat treatment process for semiconductor devices, such as a crystallization process for an amorphous silicon thin film or a dopant activation process for a poly-crystalline silicon thin film formed on a surface of a glass substrate of a flat display panel including a liquid crystal display (LCD) or an organic light emitting device (OLED).

Abstract: A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.

Abstract: A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.