Patents by Inventor Wang-Jung HSUEH
Wang-Jung HSUEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038855Abstract: A method of forming a semiconductor structure includes providing a semiconductor substrate having a source/drain feature and a gate structure formed thereon; forming an interlayer dielectric layer on the semiconductor substrate; patterning the interlayer dielectric layer to form a trench to expose the source/drain feature within the trench; forming a dielectric liner on sidewalls of the trench; filling a metal layer in the trench; recessing a portion of the metal layer in the trench, thereby forming a recess in the metal layer; and refilling a dielectric material layer in the recess.Type: ApplicationFiled: April 11, 2023Publication date: February 1, 2024Inventors: Chung-Hao CAI, Chao-Hsun WANG, Chia-Hsien YAO, Wang-Jung HSUEH, Yen-Jun HUANG, Fu-Kai YANG, Mei-Yun WANG
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Publication number: 20230411280Abstract: A device includes a semiconductor substrate, an active region over the semiconductor substrate extending lengthwise in a first direction, a gate structure over the active region extending lengthwise in a second direction perpendicular to the first direction, a source feature and a drain feature on the active region and interposed by the gate structure, a source contact on the source feature, a drain contact on the drain feature, and a via rail over the substrate spaced from the active region. The via rail includes a main portion extending lengthwise in the first direction having a sidewall surface facing opposite the end surface of the drain contact, and a jog via extending from the main portion along the second direction and having a sidewall surface facing the second direction, each of the main portion and the jog via contacting the source contact.Type: ApplicationFiled: August 23, 2023Publication date: December 21, 2023Inventors: Hao Kuang, Tung-Heng Hsieh, Sheng-Hsiung Wang, Bao-Ru Young, Wang-Jung Hsueh, Pang-Chi Wu
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Publication number: 20230260900Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang
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Publication number: 20230253244Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. Etches are performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.Type: ApplicationFiled: April 18, 2023Publication date: August 10, 2023Inventors: Chao-Hsun Wang, Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh
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Patent number: 11670544Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. A series of etches is performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.Type: GrantFiled: November 23, 2021Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Hsun Wang, Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh
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Patent number: 11640936Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.Type: GrantFiled: January 8, 2021Date of Patent: May 2, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang
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Publication number: 20230033570Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal gate stack over a substrate and an epitaxial structure over the substrate. The semiconductor device structure also includes a conductive contact electrically connected to the epitaxial structure. A topmost surface of the metal gate stack is vertically disposed between a topmost surface of the conductive contact and a bottommost surface of the conductive contact. The semiconductor device structure further includes a first conductive via electrically connected to the metal gate stack. The topmost surface of the conductive contact is vertically disposed between a topmost surface of the first conductive via and a bottommost surface of the first conductive via. In addition, the semiconductor device structure includes a second conductive via electrically connected to the conductive contact.Type: ApplicationFiled: July 30, 2021Publication date: February 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Chieh WU, Pang-Chi Wu, Wang-Jung Hsueh, Chao-Hsun Wang, Kuo-Yi Chao, Mei-Yun Wang, Yi-Chun Chang, Yuan-Tien Tu
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Publication number: 20220336268Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.Type: ApplicationFiled: May 2, 2022Publication date: October 20, 2022Inventors: Chao-Hsun WANG, Wang-Jung HSUEH, Kuo-YI CHAO, Mei-Yun WANG
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Publication number: 20220223517Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.Type: ApplicationFiled: January 8, 2021Publication date: July 14, 2022Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang
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Patent number: 11322394Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.Type: GrantFiled: January 23, 2020Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang
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Publication number: 20220093456Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. A series of etches is performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.Type: ApplicationFiled: November 23, 2021Publication date: March 24, 2022Inventors: Chao-Hsun Wang, Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh
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Patent number: 11189525Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. A series of etches is performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.Type: GrantFiled: February 21, 2020Date of Patent: November 30, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Hsun Wang, Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh
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Patent number: 11127684Abstract: A contact structure of a semiconductor device includes a gate contact in contact with a gate structure and extending through a first dielectric layer, a source/drain contact in contact with a source/drain feature and extending through the first dielectric layer, a common rail line in contact with the gate contact and the source/drain contact, and a power rail line in contact with the common rail line and electrically coupled to a ground of the semiconductor device.Type: GrantFiled: October 18, 2019Date of Patent: September 21, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang, Ru-Gun Liu
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Publication number: 20210265202Abstract: Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. A series of etches is performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.Type: ApplicationFiled: February 21, 2020Publication date: August 26, 2021Inventors: Chao-Hsun Wang, Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh
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Publication number: 20210118801Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.Type: ApplicationFiled: October 18, 2019Publication date: April 22, 2021Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang, Ru-Gun Liu
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Publication number: 20210098369Abstract: The present disclosure provides a method for fabricating an integrated circuit (IC). The method includes receiving an IC design layout defining a semiconductor structure having a via rail extending lengthwise in a first direction and contacting a source contact extending lengthwise in a second direction perpendicular to the first direction. The method further includes identifying the via rail, the source contact, a drain contact being distanced away from the source contact, and a gate structure interposing the source and drain contacts using pattern recognition on the IC design layout. The method further includes determining a position, length, and width of a jog via to be added to the IC design layout. The method further includes adding the jog via having the pre-determined length and width to the IC design layout at the pre-determined position to provide a modified IC design layout and generating a tape-out for fabricating a modified mask.Type: ApplicationFiled: July 30, 2020Publication date: April 1, 2021Inventors: Hao Kuang, Tung-Heng Hsieh, Sheng-Hsiung Wang, Bao-Ru Young, Wang-Jung Hsueh, Pang-Chi Wu
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Publication number: 20200161173Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.Type: ApplicationFiled: January 23, 2020Publication date: May 21, 2020Inventors: Chao-Hsun WANG, Wang-Jung HSUEH, Kuo-Yi CHAO, Mei-Yun WANG
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Patent number: 10636697Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.Type: GrantFiled: January 30, 2018Date of Patent: April 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang
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Publication number: 20190164813Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.Type: ApplicationFiled: January 30, 2018Publication date: May 30, 2019Inventors: Chao-Hsun WANG, Wang-Jung HSUEH, Kuo-Yi CHAO, Mei-Yun WANG