Abstract: A method of fabrication a semiconductor device includes forming a stack of semiconductor nanosheets on a semiconductor substrate, and performing a nanosheet fin reveal cut process that etches the stack of semiconductor nanosheets to from a first nanosheet fin and a second nanosheet fin. The first and second nanosheet fins are separated by one another by a distance defining an isolation region. The method further includes forming an isolation wall in the isolation region, where the isolation wall extends continuously from a wall based contacting the semiconductor substrate to an opposing wall upper surface. The method further includes forming an electrically conductive gate stack that surrounds the first nanosheet fin, the second nanosheet fin, and the isolation wall, and forming a gate interlayer dielectric (ILD) on an upper surface the electrically conductive gate stack such that the wall upper surface contacts the gate ILD.

Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

Abstract: Techniques are described for using computing devices to perform automated operations for automatically generating information about attributes of buildings from automated analysis of building information that includes floor plans and acquired building images and to subsequently using the generated building information in one or more further automated manners. In some situations, such automated generation of building information includes automatically determining objects in a building and other attributes of the building, and automatically generating descriptions about the determined building attributes. Information about such determined attributes and generated descriptions may be used in various automated manners, including for updating and/or validating information in existing building descriptions, for determining matching buildings that have similarities to indicated building descriptions or other specified criteria, for controlling device navigation (e.g.

Abstract: A method of forming a semiconductor memory device includes simultaneously filling a top portion of a first high aspect ratio (HAR) structure and a top portion a second HAR structure with a silicon-containing sacrificial layer by a cycle of a deposition process and an etch process, wherein the first HAR structure has a critical dimension (CD) of between 150 nm and 250 nm, and the second HAR structure has a CD of between 250 nm and 400 nm.

Abstract: Machine learning model training is provided. A model training result of a machine learning model is predicted utilizing a classification model based on a plurality of different combinations of input data set properties, settings of the machine learning model, and machine learning model training environment properties. Model training duration of the machine learning model is predicted utilizing a regression model based on those combinations that had a predicted successful model training result. Capacity unit hours is determined for each respective combination having the predicted successful model training result based on a corresponding predicted model training duration of the machine learning model. A particular combination of input data set properties, settings of the machine learning model, and machine learning model training environment properties that has minimum capacity unit hours is selected. The machine learning model is trained using the particular combination.

Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.