Abstract: A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Abstract: Disclosed is an avatar creation method including creating a base object of an avatar, creating at least one partial object; acquiring customizing information of a user, deforming the base object and the at least one partial object based on the customizing information; and creating a user avatar with a default facial expression by projecting the at least one partial object onto the surface of the base object.

Abstract: A semiconductor device includes a substrate having cell areas and power areas that are alternately arranged in a second direction. Gate structures extend in the second direction. The gate structures are spaced apart from each other in a first direction perpendicular to the second direction. Junction layers are arranged at both sides of each gate structure. The junction layers are arranged in the second direction such that each of the junction layer has a flat portion that is proximate to the power area. Cutting patterns are arranged in the power areas. The cutting patterns extend in the first direction such that each of the gate structures and each of the junction layers in neighboring cell areas are separated from each other by the cutting pattern.

Abstract: Disclosed is an avatar creation method including creating a base object of an avatar, creating at least one partial object; acquiring customizing information of a user, deforming the base object and the at least one partial object based on the customizing information; and creating a user avatar with a default facial expression by projecting the at least one partial object onto the surface of the base object.

Abstract: A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Abstract: A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Abstract: The disclosure provides a modified UDP-GlcNAc:Lysosomal Enzyme GlcNAc phosphotransferase with enhanced ability to phosphorylate lysosomal enzymes and methods of use thereof.

Abstract: A semiconductor device includes a first active structure on a substrate including a first epitaxial pattern, a second epitaxial pattern and a first channel pattern between the first epitaxial pattern and the second epitaxial pattern, the first channel pattern including at least one channel pattern stacked on the substrate. A first gate structure is disposed on top and bottom surfaces of the first channel pattern. A second active structure on the substrate and includes the second epitaxial pattern, a third epitaxial pattern and a second channel pattern between the second epitaxial pattern and the third epitaxial pattern in the first direction. The second channel pattern includes at least one channel pattern stacked on the substrate. The number of stacked second channel patterns is greater than the number of stacked first channel patterns. A second gate structure is disposed on top and bottom surfaces of the second channel pattern.

Abstract: A semiconductor device includes a substrate having cell areas and power areas that are alternately arranged in a second direction. Gate structures extend in the second direction. The gate structures are spaced apart from each other in a first direction perpendicular to the second direction. Junction layers are arranged at both sides of each gate structure. The junction layers are arranged in the second direction such that each of the junction layer has a flat portion that is proximate to the power area. Cutting patterns are arranged in the power areas. The cutting patterns extend in the first direction such that each of the gate structures and each of the junction layers in neighboring cell areas are separated from each other by the cutting pattern.

Abstract: A semiconductor device includes a substrate having cell areas and power areas that are alternately arranged in a second direction. Gate structures extend in the second direction. The gate structures are spaced apart from each other in a first direction perpendicular to the second direction. Junction layers are arranged at both sides of each gate structure. The junction layers are arranged in the second direction such that each of the junction layer has a flat portion that is proximate to the power area. Cutting patterns are arranged in the power areas. The cutting patterns extend in the first direction such that each of the gate structures and each of the junction layers in neighboring cell areas are separated from each other by the cutting pattern.

Abstract: A self-monitoring tire includes a tire body and a tire pressure sensor. The tire body includes a tread rubber for contact with ground, a bead for coupling to a rim, and a sidewall structure including two portions disposed at opposite sides of the tread rubber, and extending from opposite sides of the tread rubber to the bead. The tire pressure sensor is disposed between respective outward surfaces of the two portions of the sidewall structure, and secured on or embedded in either one of the two portions of the sidewall structure.

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

Abstract: A backlight module is provided. The backlight module includes a backlight control circuit and a plurality of multiple light-emitting elements coupled in series and coupled to the backlight control circuit. The backlight control circuit transmits a packet. Each of the light-emitting elements compares an address of the packet with an individual address of each of the light-emitting elements. When the address of the packet matches the individual address of a target light-emitting element of the light-emitting elements, the target light-emitting element emits light according to a light-emitting data of the packet. Each of the light-emitting elements transmits the packet to a next light-emitting element.

Abstract: A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Abstract: An OS-independent peripheral plug-and-play and driver update method for embedded system and firmware data transmission method for embedded system platform is provided. The method includes: determining whether a peripheral device is connected to the embedded system host; when the peripheral device is connected to the embedded system host, acquire the ID of the peripheral device; connecting to a firmware server; according to the ID, acquiring a driver; packing the driver into a firmware and transmitting to the embedded system host; and performing a firmware update.

Abstract: A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Abstract: A backlight module is provided. The backlight module includes a backlight control circuit and a plurality of multiple light-emitting elements coupled in series and coupled to the backlight control circuit. The backlight control circuit transmits a packet. Each of the light-emitting elements compares an address of the packet with an individual address of each of the light-emitting elements. When the address of the packet matches the individual address of a target light-emitting element of the light-emitting elements, the target light-emitting element emits light according to a light-emitting data of the packet. Each of the light-emitting elements transmits the packet to a next light-emitting element.

Abstract: The present disclosure discloses an antibacterial film structure. The antibacterial film structure comprises a silica base layer, an organic hydrophilic antibacterial layer, and a silica protective layer. The organic hydrophilic antibacterial layer is disposed on the silica base layer, and the silica protective layer is disposed on the organic hydrophilic antibacterial layer.