Abstract: A memory device including a receiving circuit is provided. The receiving circuit of the memory device includes a first path receiving a received signal and outputting the received signal directly as a first corrected signal in a current clock signal, a second path holding or tracking the received signal and outputting a second corrected signal in the current clock signal, wherein the second corrected signal is held in a previous clock signal, a summing circuit summing the first corrected signal and the second corrected signal and outputting a summed received signal, and a decision feedback equalizer comparing the summed received signal with a reference signal to decide equalized data and outputting the equalized data in the current clock signal.

Abstract: A memory device including a receiving circuit is provided. The receiving circuit of the memory device includes a first path receiving a received signal and outputting the received signal directly as a first corrected signal in a current clock signal, a second path holding or tracking the received signal and outputting a second corrected signal in the current clock signal, wherein the second corrected signal is held in a previous clock signal, a summing circuit summing the first corrected signal and the second corrected signal and outputting a summed received signal, and a decision feedback equalizer comparing the summed received signal with a reference signal to decide equalized data and outputting the equalized data in the current clock signal.

Abstract: A memory module includes a plurality of semiconductor memory devices associated with a same module board. The plurality of semiconductor memory devices configured to simultaneously perform a training operation, the plurality of semiconductor memory devices including a reception interface circuit configured to perform the training operation to search for selected equalization coefficients of an equalizer based on a training pattern from a memory controller, and transmit a training information signal to the memory controller in a training mode in response to a training command from the memory controller, the training information signal including the selected equalization coefficients.

Abstract: The present application relates to a method for preparing L-methionine crystals with an improved bulk density. As the L-methionine crystals prepared according to the method for preparing L-methionine crystals of the present application may have a bulk density of up to 800 g/L, the L-methionine crystals are expected to reduce storage and transport costs of L-methionine powder and improve working conditions due to improved fluidity of the powder.

Abstract: A memory module includes semiconductor memory devices mounted on a circuit board and a control device mounted on the circuit board. The control device receives a command, an address, and a clock signal from an external device, and provides the command, the address, and the clock signal to the semiconductor memory devices. The control device, in a hidden training mode during a normal operation, performs a command/address training on at least one semiconductor memory device of the semiconductor memory devices by transmitting a first command/address and a first clock signal to the at least one semiconductor memory device and receiving a second command/address and a second clock signal in response to the first command/address and the first clock signal, from the at least one semiconductor memory device.

Abstract: A memory module includes a plurality of semiconductor memory devices associated with a same module board. The plurality of semiconductor memory devices configured to simultaneously perform a training operation, the plurality of semiconductor memory devices including a reception interface circuit configured to perform the training operation to search for selected equalization coefficients of an equalizer based on a training pattern from a memory controller, and transmit a training information signal to the memory controller in a training mode in response to a training command from the memory controller, the training information signal including the selected equalization coefficients.

Abstract: A memory module includes a plurality of semiconductor memory devices associated with a same module board. The plurality of semiconductor memory devices configured to simultaneously perform a training operation, the plurality of semiconductor memory devices including a reception interface circuit configured to perform the training operation to search for selected equalization coefficients of an equalizer based on a training pattern from a memory controller, and transmit a training information signal to the memory controller in a training mode in response to a training command from the memory controller, the training information signal including the selected equalization coefficients.

Abstract: A memory module includes semiconductor memory devices mounted on a circuit board and a control device mounted on the circuit board. The control device receives a command, an address, and a clock signal from an external device, and provides the command, the address, and the clock signal to the semiconductor memory devices. The control device, in a hidden training mode during a normal operation, performs a command/address training on at least one semiconductor memory device of the semiconductor memory devices by transmitting a first command/address and a first clock signal to the at least one semiconductor memory device and receiving a second command/address and a second clock signal in response to the first command/address and the first clock signal, from the at least one semiconductor memory device.

Abstract: A memory device includes a plurality of receivers that each include a first input terminal coupled to one pin of a plurality of input/output pins. The memory devices further includes a transmitter having an output terminal coupled to the first input terminals of the plurality of receivers. The memory device further includes a control circuit configured to control the transmitter to output a particular test signal. The plurality of receivers are each configured to generate output data based on receiving the particular test signal from the transmitter. The control circuit is further configured to adjust the plurality of receivers based on the output data generated by the plurality of receivers and received at the control circuit from the plurality of receivers.

Abstract: A memory device includes a plurality of receivers that each include a first input terminal coupled to one pin of a plurality of input/output pins. The memory devices further includes a transmitter having an output terminal coupled to the first input terminals of the plurality of receivers. The memory device further includes a control circuit configured to control the transmitter to output a particular test signal. The plurality of receivers are each configured to generate output data based on receiving the particular test signal from the transmitter. The control circuit is further configured to adjust the plurality of receivers based on the output data generated by the plurality of receivers and received at the control circuit from the plurality of receivers.

Abstract: A memory module includes a plurality of semiconductor memory devices associated with a same module board. The plurality of semiconductor memory devices configured to simultaneously perform a training operation, the plurality of semiconductor memory devices including a reception interface circuit configured to perform the training operation to search for selected equalization coefficients of an equalizer based on a training pattern from a memory controller, and transmit a training information signal to the memory controller in a training mode in response to a training command from the memory controller, the training information signal including the selected equalization coefficients.

Abstract: A duty cycle correcting device is provided which includes a pulse width adjusting unit which adjusts a pulse width of an input signal according to a pulse width control code; a comparison unit which compares an output signal of the pulse width control unit with a plurality of reference voltages; and a control unit which selects one of a plurality of pulse width control codes based on comparison data from the comparison unit and provides the selected pulse width control code to the pulse width adjusting unit.