Patents by Inventor Wang-Sun Lee

Wang-Sun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating liquid crystal display device
    Patent number: 7989147
    Abstract: Disclosed is a method for fabricating a liquid crystal display device comprising: providing a first substrate having a pixel portion and a pad portion; sequentially laminating a gate insulating layer, a semiconductor layer and a first conductive layer on the first substrate where a gate electrode is formed; forming a first PR pattern, which is patterned relatively thin on a channel region of a transistor to be formed, on the first conductive layer with a half-tone mask; patterning the first conductive layer with the first PR pattern; forming a second PR pattern which is aligned with an outer periphery of the first conductive layer by performing a first ashing process on the first PR pattern; patterning the semiconductor layer using the second PR pattern; forming source/drain electrodes using the second PR pattern; forming a passivation layer and a pixel electrode on the first substrate; attaching a second substrate to the first substrate; and forming a liquid crystal layer between the first substrate and the
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Display Co., Ltd.
    Inventors: Woong Sik Kim, Wang-Sun Lee
  • Method for fabricating liquid crystal display device
    Publication number: 20080003526
    Abstract: Disclosed is a method for fabricating a liquid crystal display device comprising: providing a first substrate having a pixel portion and a pad portion; sequentially laminating a gate insulating layer, a semiconductor layer and a first conductive layer on the first substrate where a gate electrode is formed; forming a first PR pattern, which is patterned relatively thin on a channel region of a transistor to be formed, on the first conductive layer with a half-tone mask; patterning the first conductive layer with the first PR pattern; forming a second PR pattern which is aligned with an outer periphery of the first conductive layer by performing a first ashing process on the first PR pattern; patterning the semiconductor layer using the second PR pattern; forming source/drain electrodes using the second PR pattern; forming a passivation layer and a pixel electrode on the first substrate; attaching a second substrate to the first substrate; and forming a liquid crystal layer between the first substrate and the
    Type: Application
    Filed: June 29, 2007
    Publication date: January 3, 2008
    Inventors: Woong Sik Kim, Wang-Sun Lee