Abstract: A display device includes a substrate including a display area and a non-display area. First, second, and third insulating layers are sequentially disposed on the substrate. Pixels are disposed in the display area. Each of the pixels including a transistor and a light emitting element connected to the transistor. A data line is disposed in the display area. The data line is configured to supply a data signal to each of the plurality of pixels. A wiring portion is disposed in the non-display area. The wiring portion includes a connecting line connected to the data line and a fan-out line connected to the connecting line. A dummy pattern is disposed in the non-display area. The dummy pattern at least partially overlaps the wiring portion.

Abstract: A display device includes: a substrate that includes a first area and a second area; a plurality of pixels included in the first area; and a dummy pattern included in the second area, wherein a size of the dummy pattern is smaller than a pixel area corresponding to a first pixel among the plurality of pixels, a ratio of an area occupied by a pixel pattern of the first pixel with respect to the pixel area is a first value, a ratio of an area occupied by the dummy pattern with respect to a dummy area is a second value that is greater than the first value, and the dummy area and the pixel area have the same size as each other.

Abstract: A display device includes a substrate, a switching transistor and a driving transistor positioned on the substrate, a first electrode connected to the driving transistor, a second electrode positioned on the first electrode, and a pixel definition layer positioned between the first electrode and the second electrode, where the pixel definition layer includes a first portion, and a second portion having a thickness less than that of the first portion, where a pixel opening defined in the pixel definition layer is enclosed by the first portion, and the second portion overlaps the first electrode and the second electrode.

Abstract: A pattern structure for a display device includes a substrate, a protrusion pattern on the substrate, a first conductive pattern covering an upper surface of the protrusion pattern, an interlayer insulating layer on the first conductive pattern and including a contact hole, and a second conductive pattern on the interlayer insulating layer and connected to the first conductive pattern. The contact hole overlaps the protrusion pattern and the first conductive pattern.

Abstract: A touch sensor includes: a plurality of sensor pixels; a sensor scan driver for supplying sensor scan signals to the sensor pixels through sensor scan lines; a power supply unit for supplying common voltages to the sensor pixels through common lines; and a read-out circuit connected to the sensor pixels through the common lines, the read-out circuit configured to sense a touch by using an output signal output through the common lines, wherein two sensor pixels adjacent to each other among the sensor pixels share one common line.

Abstract: An organic light emitting diode display includes a substrate, a first electrode, a second electrode, an organic emission layer positioned between the first electrode and the second electrode, a driving voltage line, a dummy electrode. The dummy electrode is positioned at the same layer as the first electrode.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of transistors and doping regions formed at both sides of each channel; a gate insulating layer disposed on the semiconductor that includes an insulating layer opening through which the doping regions of two different transistors are exposed; a gate electrode disposed on the gate insulating layer that overlaps each channel; an interlayer insulating layer disposed on the gate electrode that includes a first and second contact holes through which the doping regions exposed within the insulating layer opening are each exposed; and data wirings disposed on the interlayer insulating layer that are each connected to the doping regions. The interlayer insulating layer includes an organic layer, and the first and second contact holes each include a first side wall positioned within the insulating layer opening.

Abstract: A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of transistors and doping regions formed at both sides of each channel; a gate insulating layer disposed on the semiconductor that includes an insulating layer opening through which the doping regions of two different transistors are exposed; a gate electrode disposed on the gate insulating layer that overlaps each channel; an interlayer insulating layer disposed on the gate electrode that includes a first and second contact holes through which the doping regions exposed within the insulating layer opening are each exposed; and data wirings disposed on the interlayer insulating layer that are each connected to the doping regions. The interlayer insulating layer includes an organic layer, and the first and second contact holes each include a first side wall positioned within the insulating layer opening.

Abstract: Disclosed herein is an organic light emitting diode display, including: a first thin film transistor including a first active pattern positioned on the substrate and a first gate electrode positioned on the first active pattern; a third thin film transistor including a third active pattern connected to the other end of the first active pattern and a third gate electrode positioned on the third active pattern; and a gate bridge directly connecting between the third active pattern and the first gate electrode and positioned between the substrate and the third active pattern.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of transistors and doping regions formed at both sides of each channel; a gate insulating layer disposed on the semiconductor that includes an insulating layer opening through which the doping regions of two different transistors are exposed; a gate electrode disposed on the gate insulating layer that overlaps each channel; an interlayer insulating layer disposed on the gate electrode that includes a first and second contact holes through which the doping regions exposed within the insulating layer opening are each exposed; and data wirings disposed on the interlayer insulating layer that are each connected to the doping regions. The interlayer insulating layer includes an organic layer, and the first and second contact holes each include a first side wall positioned within the insulating layer opening.

Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.

Abstract: An organic light-emitting diode display is disclosed. In one aspect, a semiconductor layer is on a substrate, and the semiconductor layer is non-linear. A gate metal line is on the semiconductor layer, and an insulating layer covering the semiconductor layer and the gate metal line and having a plurality of contact holes connected to the semiconductor layer. A data metal line is on the insulating layer and electrically connected to the semiconductor layer via a selected one of the contact holes. An OLED is electrically connected to the gate metal line and the data metal line, and the semiconductor layer includes a narrow semiconductor layer having a first width and an expansion semiconductor layer formed adjacent to the selected contact hole and having a second width greater than the first width.

Abstract: An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of transistors and doping regions formed at both sides of each channel; a gate insulating layer disposed on the semiconductor that includes an insulating layer opening through which the doping regions of two different transistors are exposed; a gate electrode disposed on the gate insulating layer that overlaps each channel; an interlayer insulating layer disposed on the gate electrode that includes a first and second contact holes through which the doping regions exposed within the insulating layer opening are each exposed; and data wirings disposed on the interlayer insulating layer that are each connected to the doping regions. The interlayer insulating layer includes an organic layer, and the first and second contact holes each include a first side wall positioned within the insulating layer opening.

Abstract: Disclosed herein is an organic light emitting diode display, including: a first thin film transistor including a first active pattern positioned on the substrate and a first gate electrode positioned on the first active pattern; a third thin film transistor including a third active pattern connected to the other end of the first active pattern and a third gate electrode positioned on the third active pattern; and a gate bridge directly connecting between the third active pattern and the first gate electrode and positioned between the substrate and the third active pattern.

Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.

Abstract: A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.

Abstract: Disclosed herein is an organic light emitting diode display, including a substrate, a first thin film transistor including a first active pattern on the substrate and a first gate electrode on the first active pattern, a data wire on the first gate electrode, a first interlayer insulating layer between the first gate electrode and the data wire, a second interlayer insulating layer positioned the first interlayer insulating layer and the data wire, and an organic light emitting diode positioned on the data wire and connected to the first active pattern.

Abstract: A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.