Patents by Inventor WANG XINPENG

WANG XINPENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-step voltage for forming resistive access memory (RRAM) cell filament
    Patent number: 9959927
    Abstract: A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: May 1, 2018
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Feng Zhou, Xian Liu, Nhan Do, Hieu Van Tran, Hung Quoc Nguyen, Mark Reiten, Zhixian Chen, Wang Xinpeng, Guo-Qiang Lo
  • Multi-Step Voltage For Forming Resistive Random Access Memory (RRAM) Cell Filament
    Publication number: 20170316823
    Abstract: A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
    Type: Application
    Filed: January 11, 2017
    Publication date: November 2, 2017
    Inventors: Feng Zhou, XIAN LIU, NHAN DO, HIEU VAN TRAN, HUNG QUOC NGUYEN, MARK REITEN, ZHIXIAN CHEN, WANG XINPENG, GUO-QIANG LO