Patents by Inventor Wang Y Leong

Wang Y Leong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6858912
    Abstract: A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard ring 310 delimiting the APD 300. Within the guard ring 310 is an implanted n+ APD layer 312 upon which is deposited an epitaxial p+ APD layer 314, these layers forming the APD 300. The APD may be incorporated in an amplifier circuit 50 providing feedback to maintain constant bias voltage, and may include an SiGe absorption region to provide extended long wavelength response or lower avalanche voltage. Non-avalanche photodiodes may also be used.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: February 22, 2005
    Assignee: QinetiQ Limited
    Inventors: Gillian F Marshall, David J Robbins, Wang Y Leong, Steven W Birch
  • Publication number: 20020024058
    Abstract: A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard ring 310 delimiting the APD 300. Within the guard ring 310 is an implanted n+ APD layer 312 upon which is deposited an epitaxial p+ APD layer 314, these layers forming the APD 300. The APD may be incorporated in an amplifier circuit 50 providing feedback to maintain constant bias voltage, and may include an SiGe absorption region to provide extended long wavelength response or lower avalanche voltage. Non-avalanche photodiodes may also be used.
    Type: Application
    Filed: August 8, 2001
    Publication date: February 28, 2002
    Inventors: Gillian F. Marshall, David J. Robbins, Wang Y. Leong, Steven W. Birch