Abstract: A semiconductor structure and a formation method thereof are provided. The formation method includes: providing a substrate and a fin, a gate structure being formed on the substrate, the gate structure spanning the fin and covering a partial sidewall and a partial top of the fin, and a source/drain doping region being formed in the fin on both sides of the gate structure; forming a first dielectric layer on the substrate, the first dielectric layer exposing the top of the fin; forming an etch stop layer to conformally cover the first dielectric layer and the fin and the source/drain doping region exposed by the first dielectric layer; forming a second dielectric layer on the etch stop layer; and forming a conductive plug penetrating through the second dielectric layer and the etch stop layer, the conductive plug spanning the fin, and the conductive plug being connected to the source/drain doping region.

Abstract: A semiconductor structure and a formation method thereof are provided. The formation method includes: providing a substrate and a fin, a gate structure being formed on the substrate, the gate structure spanning the fin and covering a partial sidewall and a partial top of the fin, and a source/drain doping region being formed in the fin on both sides of the gate structure; forming a first dielectric layer on the substrate, the first dielectric layer exposing the top of the fin; forming an etch stop layer to conformally cover the first dielectric layer and the fin and the source/drain doping region exposed by the first dielectric layer; forming a second dielectric layer on the etch stop layer; and forming a conductive plug penetrating through the second dielectric layer and the etch stop layer, the conductive plug spanning the fin, and the conductive plug being connected to the source/drain doping region.

Abstract: An electrode comprises an acid treated, cathodically cycled carbon-comprising film or body. The carbon consists of single walled nanotubes (SWNTs), pyrolytic graphite, microcrystalline graphitic, any carbon that consists of more than 99% sp2 hybridized carbons, or any combination thereof. The electrode can be used in an electrochemical device functioning as an electrolyser for evolution of hydrogen or as a fuel cell for oxidation of hydrogen. The electrochemical device can be coupled as a secondary energy generator into a system with a primary energy generator that naturally undergoes generation fluctuations. During periods of high energy output, the primary source can power the electrochemical device to store energy as hydrogen, which can be consumed to generate electricity as the secondary source during low energy output by the primary source. Solar cells, wind turbines and water turbines can act as the primary energy source.

Abstract: A combination contractor's pencil sharpener and retainer includes a sharpener having a body member which is inserted through a retainer loop mounted on a plate. The plate is attached to a contractor's tool belt, tool case or the like. The sharpener is retained by a U-shaped spring member which engages against a retention flange associated with the sharpener.

Abstract: A vane type pump suitable for a hydraulic system comprises passages communicating with the underside of the vanes in the inlet quadrant with the surrounding of the drive shaft and passages communicating the underside of the vanes in the discharge quadrant with the discharge chamber, thereby the underside of the vanes can act as a set of additional little pumps while being ineffective at zero pressure. The undervane pressure in the inlet quadrant can be tested and adjusted at any time during the operation by a manometer and an auxiliary valve. The vane type pump in accordance with the present invention is adapted to various viscosities of fluid such as 1-38 cst, 50.degree. C., and it is possible to work at negative pressure without keeping the reservoir a certain relative height and without replacing the inner component. The pump works at a high volumetric efficiency and total efficiency all the time.