Patents by Inventor WANG-YI LEE

WANG-YI LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230240156
    Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
    Type: Application
    Filed: January 21, 2022
    Publication date: July 27, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der CHIH, Wen-Zhang LIN, Yun-Sheng CHEN, Jonathan Tsung-Yung CHANG, Chrong-Jung LIN, Ya-Chin KING, Cheng-Jun LIN, Wang-Yi LEE
  • Publication number: 20230050978
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.
    Type: Application
    Filed: August 12, 2021
    Publication date: February 16, 2023
    Inventors: YU-DER CHIH, MAY-BE CHEN, YUN-SHENG CHEN, JONATHAN TSUNG-YUNG CHANG, WEN ZHANG LIN, CHRONG JUNG LIN, YA-CHIN KING, CHIEH LEE, WANG-YI LEE