Abstract: A new method is provided to create a capacitor over the surface of STI regions. The STI regions are first created in the surface of the substrate, a layer of sacrificial oxide is next blanket deposited over the substrate (thereby including the surface of the created STI regions). A depletion stop region overlying densely spaced STI regions is formed in the surface of the substrate by N+ ion implantation, N-well and P-well regions are formed surrounding the depletion stop region. An insulation layer is deposited. The sacrificial oxide and insulation layers are patterned and etched leaving the sacrificial oxide and the insulation layer in place where the capacitor is to be created. A layer of gate oxide is formed over the surface of the substrate, a layer of poly 2 is deposited for the bottom plate and the gate electrode.