Abstract: The present disclosure relates to a resonance-type contactless power supply and a power receiver. A high-frequency power supply provides a high-frequency AC current with a predetermined frequency. A transmitter-side resonant circuit includes a transmitting coil for receiving the high-frequency AC current from the high-frequency power supply. A receiver-side resonant circuit includes a receiving coil which is separated from but coupled to the transmitting coil in contactless manner. The receiver-side resonant circuit receives electric energy from the transmitting coil. A receiver-side parallel capacitor is connected in parallel at an output terminal of the receiver-side resonant circuit. The receiver-side parallel capacitor has a capacitance value which is in inversely proportional to the product of a square of an angular frequency of the predetermined frequency and a predetermined mutual inductance.

Abstract: A resonant contactless electric energy transmitter configured to contactlessly supply electric energy to an electric energy receiver, can include: (i) a high frequency power supply configured to generate a high frequency AC power with a frequency that is the same as a leakage inductance resonant frequency, where the leakage resonant frequency is obtained by detection of an output current of the high frequency power supply that corresponds to the high frequency AC power of a sequence of different frequencies during a frequency sweeping time period; and (ii) a transmitting resonant circuit comprising a transmitting coil, and being configured to receive the high frequency AC power from the high frequency power supply.

Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.

Abstract: A light emitting diode (LED) structure, a LED device and methods for forming the same are provided. The LED structure comprises a LED wafer; and a phosphor layer having a flat surface and formed above a light emitting surface of the LED wafer, in which the phosphor layer is formed by centrifugal spin coating.

Abstract: A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.

Abstract: A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection.

Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

Abstract: A light emitting diode includes a substrate comprising a plurality of first grooves and a plurality of first convex parts formed on a surface of the substrate, with the first groove formed between two neighboring first convex parts; a semiconductor structure formed on the substrate comprising a plurality of second convex parts corresponding to the plurality of first grooves and a plurality of second grooves corresponding to the plurality of first convex parts; a transparent conductive layer formed on the semiconductor structure and configured to transmit a current to the plurality of second convex parts; a first electrode electrically connected with the semiconductor structure; and a second electrode electrically connected with the transparent conductive layer. A method for preparing the light emitting diode is also provided.

Abstract: A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun. The ZnO source material is deposited at a deposition rate higher than the rate at which the ITO source material is deposited. Generation and termination of current may be controlled by adjusting a duty cycle of pulse current provided by the pulse current electron gun and result in discontinuous deposition of the ZnO source material. The method further comprises depositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer and form a finished ITO layer.

Abstract: A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection.

Abstract: A light emitting diode (LED) structure, a LED device and methods for forming the same are provided. The LED structure comprises a LED wafer; and a phosphor layer having a flat surface and formed above a light emitting surface of the LED wafer, in which the phosphor layer is formed by centrifugal spin coating.

Abstract: A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.

Abstract: A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.

Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.

Abstract: A method for manufacturing a light emitting diode chip is provided, comprising: providing a substrate, an upper surface of which comprising a plurality of micro-bulges formed thereon; forming a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on the upper surface of the substrate successively; partially etching the second type semiconductor layer and the light emitting layer to form an electrode bonding area on the first type semiconductor layer; and forming a first electrode structure on the electrode bonding area and forming a second electrode structure on the second type semiconductor layer. A LED chip and a LED comprising the same are also provided.

Abstract: A light emitting diode includes a substrate comprising a plurality of first grooves and a plurality of first convex parts formed on a surface of the substrate, with the first groove formed between two neighboring first convex parts; a semiconductor structure formed on the substrate comprising a plurality of second convex parts corresponding to the plurality of first grooves and a plurality of second grooves corresponding to the plurality of first convex parts; a transparent conductive layer formed on the semiconductor structure and configured to transmit a current to the plurality of second convex parts; a first electrode electrically connected with the semiconductor structure; and a second electrode electrically connected with the transparent conductive layer. A method for preparing the light emitting diode is also provided.

Abstract: A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.