Patents by Inventor Wang Zhenliang

Wang Zhenliang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming trench and disposing semiconductor die over substrate to control outward flow of underfill material
    Patent number: 9627229
    Abstract: A semiconductor device has a substrate including an opening. A trench is formed over the substrate around the opening. An interconnect structure is formed in the trench. An underfill material is disposed over the interconnect structure. A first semiconductor die is disposed over the underfill material prior to curing the underfill material. An active region of the first semiconductor die is disposed over the opening in the substrate. The trench contains the outward flow of underfill material. Underfill material is blocked from flowing over unintended areas on the surface of substrate, into the opening in the substrate, and over sensors of the first semiconductor die. A second semiconductor die is disposed over the substrate. The trench is formed by a first and second dam or a first insulating layer. A second insulating layer is formed over the first insulating layer. A dam is formed over the second insulating layer.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: April 18, 2017
    Assignee: STATS ChipPAC Pte. Ltd.
    Inventors: Hoang Lan, Wang Zhenliang
  • Semiconductor Device and Method of Forming Trench and Disposing Semiconductor Die Over Substrate to Control Outward Flow of Underfill Material
    Publication number: 20150001729
    Abstract: A semiconductor device has a substrate including an opening. A trench is formed over the substrate around the opening. An interconnect structure is formed in the trench. An underfill material is disposed over the interconnect structure. A first semiconductor die is disposed over the underfill material prior to curing the underfill material. An active region of the first semiconductor die is disposed over the opening in the substrate. The trench contains the outward flow of underfill material. Underfill material is blocked from flowing over unintended areas on the surface of substrate, into the opening in the substrate, and over sensors of the first semiconductor die. A second semiconductor die is disposed over the substrate. The trench is formed by a first and second dam or a first insulating layer. A second insulating layer is formed over the first insulating layer. A dam is formed over the second insulating layer.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 1, 2015
    Inventors: Hoang Lan, Wang Zhenliang