Patents by Inventor Wang Zhi Jie

Wang Zhi Jie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer
    Patent number: 6287884
    Abstract: A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation.
    Type: Grant
    Filed: January 20, 1999
    Date of Patent: September 11, 2001
    Assignee: Institute of Materials Research and Engineering
    Inventors: Wang Zhi Jie, Chua Soo Jin