Abstract: A semiconductor device includes first and second select lines, first and second vertical pillars, and first and second subsidiary lines. The select lines are spaced apart and include a first separating insulation layer therebetween. Each of the first and second vertical pillars is connected to a corresponding one of the first or second select lines. The first vertical pillars are closer to the first separating insulation layer. The second vertical pillars arranged in an oblique direction from the first vertical pillars. Each of the first subsidiary lines connects a pair of the first vertical pillars. Each of the second subsidiary lines connects a pair of the second vertical pillars adjacent. The first and second subsidiary lines are alternately disposed along a first direction, and ends of the first and second subsidiary lines are aligned along the first direction.

Abstract: A semiconductor device includes first and second select lines, first and second vertical pillars, and first and second subsidiary lines. The select lines are spaced apart and include a first separating insulation layer therebetween. Each of the first and second vertical pillars is connected to a corresponding one of the first or second select lines. The first vertical pillars are closer to the first separating insulation layer. The second vertical pillars arranged in an oblique direction from the first vertical pillars. Each of the first subsidiary lines connects a pair of the first vertical pillars. Each of the second subsidiary lines connects a pair of the second vertical pillars adjacent. The first and second subsidiary lines are alternately disposed along a first direction, and ends of the first and second subsidiary lines are aligned along the first direction.