Patents by Inventor WAN GI SOHN

WAN GI SOHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230363147
    Abstract: A semiconductor memory device is provided that includes: a substrate extending in each of a first direction and a second direction that intersect each other; and storage patterns disposed on the substrate, and spaced apart from each other in each of the first and second directions. Each of the storage patterns extends in a third direction intersecting a plane defined by the first and second directions, and comprises a face in contact with a respective one from among storage contacts. The face of each of the storage patterns has a first width along the first direction and a second width along the second direction. The first width of the face of the storage patterns increases in a relative manner to each other in the first direction, while spacings in the first direction between adjacent ones of the storage patterns decrease in a relative manner to each other in the first direction.
    Type: Application
    Filed: January 25, 2023
    Publication date: November 9, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan Gi SOHN, Kyeong Hwan KANG, Sung Hyun BAE
  • Patent number: 10804219
    Abstract: A semiconductor device includes a plurality of lower electrodes repeatedly arranged at a first pitch in a first direction and a second direction crossing the first direction at an acute angle on a substrate, and a support pattern in contact with sidewalls of the plurality of lower electrodes and supporting the plurality of lower electrodes. The support pattern includes a first support region having a plurality of openings penetrating the support pattern and a second support region disposed at a periphery of the first support region. The plurality of openings may continuously extend in a zigzag manner, respectively, throughout an entirety of the first support region.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: October 13, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Wan Gi Sohn
  • Publication number: 20200152584
    Abstract: A semiconductor device includes a plurality of lower electrodes repeatedly arranged at a first pitch in a first direction and a second direction crossing the first direction at an acute angle on a substrate, and a support pattern in contact with sidewalls of the plurality of lower electrodes and supporting the plurality of lower electrodes. The support pattern includes a first support region having a plurality of openings penetrating the support pattern and a second support region disposed at a periphery of the first support region. The plurality of openings may continuously extend in a zigzag manner, respectively, throughout an entirety of the first support region.
    Type: Application
    Filed: June 20, 2019
    Publication date: May 14, 2020
    Inventor: WAN GI SOHN