Abstract: Provided is a method of fabricating a semiconductor package, the method including forming a passivation layer and a first protective layer covering a semiconductor substrate and conductive pad above a first surface of the semiconductor substrate, removing a portion of the passivation layer and a portion of the first protective layer to expose the conductive pad, forming a second protective layer covering the conductive pad on the first protective layer, grinding a second surface opposite the first surface of the semiconductor substrate, dicing the semiconductor substrate, and removing the second protective layer to expose the conductive pad, wherein the second protective layer does not expose the conductive pad during the grinding and during the dicing.

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate, grinding the substrate using a grinding apparatus, and dressing grinding tips of the grinding apparatus using a dressing unit of the grinding apparatus. The dressing unit includes driving parts, a dressing board on the driving parts, and magnets between the dressing board and the driving parts. The dressing board is configured to perform the dressing of the grinding tips of the grinding apparatus. The magnets are configured to generate one or more magnetic fields to float the dressing board from the driving parts using a repulsive force of the one or more magnetic fields.

Abstract: A grinding apparatus and a method for manufacturing a semiconductor device using the same are provided. A grinding apparatus includes a chuck unit configured to receive a substrate, a grinding unit on a part of the chuck unit and configured to grind the substrate, and a dressing unit under a part of the grinding unit adjacent to the chuck unit and including a dressing board configured to dress the grinding unit and magnets under the dressing board.

Abstract: A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.

Abstract: Provided is a method of fabricating a semiconductor package, the method including forming a passivation layer and a first protective layer covering a semiconductor substrate and conductive pad above a first surface of the semiconductor substrate, removing a portion of the passivation layer and a portion of the first protective layer to expose the conductive pad, forming a second protective layer covering the conductive pad on the first protective layer, grinding a second surface opposite the first surface of the semiconductor substrate, dicing the semiconductor substrate, and removing the second protective layer to expose the conductive pad, wherein the second protective layer does not expose the conductive pad during the grinding and during the dicing.

Abstract: A grinding apparatus and a method for manufacturing a semiconductor device using the same are provided. A griding apparatus includes a chuck unit configured to receive a substrate, a grinding unit on a part of the chuck unit and configured to grind the substrate, and a dressing unit under a part of the grinding unit adjacent to the chuck unit and including a dressing board configured to dress the grinding unit and magnets under the dressing board.

Abstract: A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.