Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Abstract: An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Abstract: An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.

Abstract: A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed.

Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Abstract: An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Abstract: A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Abstract: An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.

Abstract: A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.

Abstract: A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced.

Abstract: A method of forming a metal pattern is provided. In the method, a first titanium layer, a copper layer and a second titanium layer are sequentially formed on a substrate. A photo pattern is formed on the second titanium layer. The first titanium layer, the copper layer and the second titanium layer are patterned using the photo pattern to form a first titanium pattern, a copper pattern formed on the first titanium pattern and a second titanium pattern formed on the copper pattern. Therefore, a fine metal pattern may be formed.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water.

Abstract: An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.

Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Abstract: A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced.

Abstract: A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.