Abstract: A memory device includes: a memory cell, a reference memory cell, and a dual mode inverter-based write termination circuit including a write driver for writing data to the memory cell, the dual mode inverter-based write termination circuit detecting the completion of writing data to the memory cell and terminating the operation of the write driver, and also sequentially receiving an output signal of the reference memory cell and an output signal of the memory cell through one input node to sense and amplify the data stored in the memory cell.

Abstract: A method for manufacturing a semiconductor device is disclosed, in which characteristics of the semiconductor device and an operation speed are improved. In forming sidewall spacers at both sides of a gate electrode, a semiconductor substrates is partially removed at both sides of the sidewall spacer by controlling an etch gas, and then a process for forming a silicide layer is performed, thereby increasing a distance between the silicide layer and a channel. Accordingly, it is possible to decrease a resistance material between the silicide layer and the channel region.

Abstract: A method for manufacturing a semiconductor device is disclosed, in which characteristics of the semiconductor device and an operation speed are improved. In forming sidewall spacers at both sides of a gate electrode, a semiconductor substrates is partially removed at both sides of the sidewall spacer by controlling an etch gas, and then a process for forming a silicide layer is performed, thereby increasing a distance between the silicide layer and a channel. Accordingly, it is possible to decrease a resistance material between the silicide layer and the channel region.