Patents by Inventor Wanit MANOROTKUL

Wanit MANOROTKUL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same
    Patent number: 9576969
    Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: February 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wanit Manorotkul, Joong-han Shin, Bong-jin Kuh, Han-mei Choi, Dmitry Mikulik
  • INTEGRATED CIRCUIT DEVICE INCLUDING POLYCRYSTALLINE SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160300847
    Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.
    Type: Application
    Filed: June 17, 2016
    Publication date: October 13, 2016
    Inventors: Wanit MANOROTKUL, Joong-han SHIN, Bong-jin KUH, Han-mei CHOI, Dmitry MIKULIK
  • Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same
    Patent number: 9391090
    Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: July 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wanit Manorotkul, Joong-han Shin, Bong-jin Kuh, Han-mei Choi, Dmitry Mikulik
  • LASER ANNEALING APPARATUS
    Publication number: 20160126119
    Abstract: A laser annealing apparatus includes a process chamber with a chamber window to transmit a laser beam, and a chuck in the process chamber, a top surface of the chuck supporting a loaded substrate, and a width of the chuck being smaller than a width of the loaded substrate.
    Type: Application
    Filed: October 13, 2015
    Publication date: May 5, 2016
    Inventors: Joonghan SHIN, Bongjin KUH, Wanit MANOROTKUL, Hanmei CHOI
  • INTEGRATED CIRCUIT DEVICE INCLUDING POLYCRYSTALLINE SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160056171
    Abstract: An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.
    Type: Application
    Filed: July 21, 2015
    Publication date: February 25, 2016
    Inventors: Wanit MANOROTKUL, Joong-han SHIN, Bong-jin KUH, Han-mei CHOI, Dmitry MIKULIK