Abstract: Embodiments of this application relate to the terminal field and disclose a data transmission method and a terminal, to increase a speed of data transmission between terminals and ensure stability during the data transmission. The method includes: A terminal establishes a wireless connection to another terminal; in addition, the terminal establishes a USB connection to the another terminal; then, the terminal can display a first interface, where the first interface includes at least one piece of candidate data; a user may select to-be-transmitted data from the at least one piece of candidate data after performing a first input on the first interface; and the terminal may send the to-be-transmitted data to the another terminal through the wireless connection and the USB connection after the user performs a second input on the first interface.

Abstract: Disclosed herein is an apparatus comprising an electrode active layer comprising a network of high aspect ratio carbon elements defining void spaces within the network; a plurality of electrode active material particles disposed in the void spaces within the network and enmeshed in the network; and a surface treatment on the surface of the high aspect ratio carbon elements which promotes adhesion between the high aspect ratio carbon elements and the active material particles.

Abstract: A reverse blocking gallium nitride (GaN) high electron mobility transistor includes, sequentially stacked from bottom to top, a substrate, a nucleation layer, a buffer layer, a barrier layer, a dielectric layer. The buffer layer and the barrier layer form a heterojunction structure. The barrier layer is provided with at least two p-GaN structures. The barrier layer is provided with a source metal at one end and a drain metal at the other end, source metal forms ohmic contact and drain metal forms Schottky contact with AlGaN barrier, respectively. In forward conduction, the two-dimensional electron gas below the spaced p-GaN structure connected to the drain metal is conductive, and a turn-on voltage of the device is low. During reverse blocking, the two-dimensional electron gas at the spaced p-GaN structure is rapidly depleted under reverse bias, to form a depletion region, so that the blocking capability of the device is improved.

Abstract: A die bonding process for manufacturing a semiconductor device includes the steps of: a) preparing a semiconductor structure and a substrate, b) mounting an electrode structure on the semiconductor structure to form a semiconductor component, c) forming a protective component at a die bonding region, and d) mounting the semiconductor component on the substrate via a die bonding technique. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.

Abstract: The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.

Abstract: The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.

Abstract: Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the (electron gas) channels in both structures at the hetero-interface between the epitaxial layers.

Abstract: Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the (electron gas) channels in both structures at the hetero-interface between the epitaxial layers.