Patents by Inventor Wanke Tao

Wanke Tao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12184268
    Abstract: A gate drive circuit for a power semiconductor device, a low-side switching circuit, a high-side switching circuit, and a drive method are disclosed. When a first gate driver receives a control signal which is at a first level, the first gate driver connects a first gate to a first voltage, so that the first gate controls a channel region. When the transistor operates on a Miller plateau, the area of an overlapping region between the first gate and a drain inside the transistor is relatively small, so the Miller capacitance of the transistor is relatively small, thereby improving the switching speed of the transistor. A second gate is connected to a second voltage after a first duration, so that the second gate controls a drift region of the transistor to form an accumulation layer, and the accumulation layer has a relatively high carrier concentration.
    Type: Grant
    Filed: July 26, 2023
    Date of Patent: December 31, 2024
    Assignee: Innovision Semiconductor Inc.
    Inventors: Feng Han, Xuening Li, Wanke Tao
  • Publication number: 20240405761
    Abstract: A gate drive circuit for a power semiconductor device, a low-side switching circuit, a high-side switching circuit, and a drive method are disclosed. When a first gate driver receives a control signal which is at a first level, the first gate driver connects a first gate to a first voltage, so that the first gate controls a channel region. When the transistor operates on a Miller plateau, the area of an overlapping region between the first gate and a drain inside the transistor is relatively small, so the Miller capacitance of the transistor is relatively small, thereby improving the switching speed of the transistor. A second gate is connected to a second voltage after a first duration, so that the second gate controls a drift region of the transistor to form an accumulation layer, and the accumulation layer has a relatively high carrier concentration.
    Type: Application
    Filed: July 26, 2023
    Publication date: December 5, 2024
    Applicant: Innovision Semiconductor Inc.
    Inventors: Feng HAN, Xuening LI, Wanke TAO
  • Patent number: 10256727
    Abstract: An interleaved multi-phase power supply with a plurality of DC-DC converter ICs. Each DC-DC converter IC has a current sharing pin, and the current sharing pins of the plurality of DC-DC converter ICs are connected together. Each DC-DC converter IC receives a feedback voltage signal to compare with a reference voltage signal to generate an error voltage signal as a reference of an output current of the corresponding DC-DC converter IC. And each DC-DC converter IC has a mismatch voltage regulation module regulating the error voltage signal to be equal to an average of error voltage signals of the plurality of DC-DC converter ICs.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: April 9, 2019
    Assignee: Chengdu Monolithic Power Systems Co., Ltd.
    Inventors: Wanke Tao, Tianzhu Zhang
  • Publication number: 20180191251
    Abstract: An interleaved multi-phase power supply with a plurality of DC-DC converter ICs. Each DC-DC converter IC has a current sharing pin, and the current sharing pins of the plurality of DC-DC converter ICs are connected together. Each DC-DC converter IC receives a feedback voltage signal to compare with a reference voltage signal to generate an error voltage signal as a reference of an output current of the corresponding DC-DC converter IC. And each DC-DC converter IC has a mismatch voltage regulation module regulating the error voltage signal to be equal to an average of error voltage signals of the plurality of DC-DC converter ICs.
    Type: Application
    Filed: December 18, 2017
    Publication date: July 5, 2018
    Inventors: Wanke Tao, Tianzhu Zhang