Abstract: A quantum dot includes a first core layer and a shell layer surrounding the first core layer, wherein a difference in lattice constants between the first core layer and the shell layer is controlled to be 3% or less. The quantum dot according to an embodiment may be applied to a light emitting element and a display device, thereby providing improved luminous efficiency.

Abstract: A quantum dot includes a core and a plurality of shell layers surrounding the core. The core has a band gap less than that of the outermost shell layer, and the outermost shell layer has a band gap less than that of a second shell layer. Thus, a light emitting device including the quantum dot according to an embodiment may have an improved lifespan of the device and excellent luminous efficiency characteristics.

Abstract: A quantum dot includes a first core layer and a shell layer surrounding the first core layer, wherein a difference in lattice constants between the first core layer and the shell layer is controlled to be 3% or less. The quantum dot according to an embodiment may be applied to a light emitting element and a display device, thereby providing improved luminous efficiency.

Abstract: A quantum dot includes a core and a plurality of shell layers surrounding the core. The core has a band gap less than that of the outermost shell layer, and the outermost shell layer has a band gap less than that of a second shell layer. Thus, a light emitting device including the quantum dot according to an embodiment may have an improved lifespan of the device and excellent luminous efficiency characteristics.

Abstract: Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.

Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

Abstract: A method of manufacturing a quantum dot, the method including preparing a CdS/CdSe/CdS quantum dot that includes a CdS-containing first core, a CdSe-containing second core, and a CdS-containing shell; forming a Cu2S/Cu2Se/Cu2S quantum dot by injecting the CdS/CdSe/CdS quantum dot into a solution containing a Cu precursor; and forming a ZnS/ZnSe/ZnS quantum dot by injecting the Cu2S/Cu2Se/Cu2S quantum dot into a solution containing a Zn precursor.

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.

Abstract: Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.

Abstract: Disclosed are nonvolatile resistance random access memory device and a fabrication method thereof. The nonvolatile resistance random access memory device includes a lower electrode, an insulator film formed on a surface of the lower electrode, and an upper electrode formed over the insulator film, the lower electrode includes a base, and a thin metal layer formed on a surface of the base, and the lower electrode has a 3D structural pattern in which a plurality of protruding structures is repeatedly arranged at a constant interval. The 3D metal structures have a shape selected from among a pyramid (quadrangular pyramid), a trapezoidal pyramid (pyramid with a flat top), a pillar, and a prism. Uniform conductive filaments are formed via the space between the 3D metal structures, whereby the nonvolatile resistance random access memory device is capable of being driven at a low operating voltage and has long-term stability.

Abstract: Methods for producing nanoparticle thin films are disclosed. According to one of the methods, a nanoparticle thin film is produced by modifying the surface of nanoparticles to allow the nanoparticles to be charged, controlling an electrostatic attractive force between the charged nanoparticles and a substrate and a repulsive force between the individual nanoparticles by a variation in pH to control the number density of the nanoparticles arranged on the substrate.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: Provided are quantum dots having a gradual composition gradient shell structure which have an improvedluminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells areformed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient. Thus, even if the shells are formed to a large thickness, the lattice mismatch between cores and shells is relieved. Furthermore, on the basis of the funneling concept, electrons and holes generated in the shells are transferred to the cores to emit light, thereby obtaining a high luminous efficiency of 80% or more.