Abstract: A method and system for monitoring operation of a hydraulic turbine under an extremely low water head, belonging to the technical field of hydraulic turbines.

Abstract: A die bonding method includes temporarily bonding a first carrier wafer to a front side of a device wafer, so that a back-side connection structure can be formed on a back side of the device wafer to lead out an interconnect structure in the device wafer to the back side of the device wafer. Moreover, through bonding a second carrier wafer to the back side of the device wafer, the first carrier wafer can be debonded. After the device wafer and the second carrier wafer are debonded, a second bonding adhesive is retained in order to provide protection to the back side of the device wafer during the subsequent dicing of the device wafer and to avoid particles or etching by-products produced during the dicing process from adhering to the back side of the device wafer.

Abstract: A die-to-wafer stacking method includes: providing a wafer to be processed, including a substrate, a dielectric layer on the substrate and a metal layer embedded in the dielectric layer; forming a bonding layer covering the dielectric layer; picking up dies to be bonded from the wafer to be processed and arranging the dies to be bonded on an electrostatic chuck; and bonding the dies arranged on the electrostatic chuck, as a whole, to a wafer to be bonded. Pre-arranging all the dies to be bonded on the electrostatic chuck and then bonding the dies on the electrostatic chuck, as a whole, to the wafer to be bonded can greatly shorten post-activation waiting times of dies before they are bonded to the wafer and thus reduce the risk of loss of activation.

Abstract: A method of bonding first die(s) to a wafer and a die-stack structure includes: providing a first layer of first die(s), each of the first die(s) including a first metal layer; providing the wafer, which includes a second metal layer; bonding the first die(s) to the wafer; forming an insulating layer and a hole, the insulating layer covering the wafer around the first die(s) or filling gap(s) between the first die(s), the hole formed in the insulating layer around the first die(s); forming an interconnect structure in the hole, the first metal layer, the second metal layer and the interconnect structure are electrically connected, thus establishing electrical connection between the first die(s) and the wafer. In this method, it is unnecessary to form TSV within the first die(s), reducing difficulties in the design of internal wiring within the first die(s) and resulting in area savings of the first die(s).

Abstract: A die bonding method is disclosed, through coating bonding adhesive on front side of device wafer and bonding carrier wafer thereto, back-side connection structure can be formed on back side of device wafer to lead out an interconnect structure in device wafer to back side of device wafer, and dies thereon can be bonded at front sides to target wafer. Moreover, after device wafer is debonded from carrier wafer, the bonding adhesive is retained on front side of device wafer to provide protection to front side of device wafer during subsequent dicing of device wafer, and to avoid particles or etching by-products produced during dicing process from adhering to front side of device wafer. Such etching by-products are subsequently removed along with the bonding adhesive, ensuring cleanness of front sides of individual dies resulting from dicing process and improved quality of bonding of dies at front sides to target wafer.

Abstract: Provided is an underwater repair system for a cavity region of a concrete panel rock-fill dam panel, including a moving platform, a work cabin, a pressure drainage apparatus, a traction apparatus, and a positioning apparatus; the traction apparatus controlling the movement of the moving platform on the surface of a dam concrete panel; the positioning apparatus transmits a detection position; the work cabin is a pressure cabin, the work cabin being connected to the pressure drainage apparatus, and a drill apparatus and grouting apparatus being arranged in the work cabin; the moving platform moves into the cavity region, and the pressure drainage apparatus starts up to drain the water in the work cabin, a partially closed waterless space being formed inside the work cabin, the drill apparatus drilling the concrete panel at the upper end of the cavity region and the grouting apparatus subsequently implementing grouting to complete the repair.

Abstract: A semiconductor wafer, a bonding structure, and a wafer bonding method are provided. In the semiconductor wafer, a bonding pad which is electrically connected to the interconnection structure is formed in the top cover layer, and a bonding alignment mark formed by a point array is disposed in the top cover layer. In this way, the bonding alignment mark is disposed in the top cover layer, and the top cover layer is not covered by another material layer, thereby facilitating recognition of the alignment pattern by the bonding device and increasing the alignment window in bonding process. Moreover, the bonding alignment mark is formed by a point array, thereby facilitating integration of the process for forming the bonding alignment mark with the bonding hole process and avoiding defects such as the dishing phenomenon in the manufacturing process.

Abstract: Provided is an underwater repair system for a cavity region of a concrete panel rock-fill dam panel, including a moving platform, a work cabin, a pressure drainage apparatus, a traction apparatus, and a positioning apparatus; the traction apparatus controlling the movement of the moving platform on the surface of a dam concrete panel; the positioning apparatus transmits a detection position, the work cabin is a pressure cabin, the work cabin being connected to the pressure drainage apparatus, and a drill apparatus and grouting apparatus being arranged in the work cabin; the moving platform moves into the cavity region, and the pressure drainage apparatus starts up to drain the water in the work cabin, a partially closed waterless space being formed inside the work cabin, the drill apparatus drilling the concrete panel at the upper end of the cavity region and the grouting apparatus subsequently implementing grouting to complete the repair.

Abstract: A semiconductor wafer, a bonding structure, and a wafer bonding method are provided. In the semiconductor wafer, a bonding pad which is electrically connected to the interconnection structure is formed in the top cover layer, and a bonding alignment mark formed by a point array is disposed in the top cover layer. In this way, the bonding alignment mark is disposed in the top cover layer, and the top cover layer is not covered by another material layer, thereby facilitating recognition of the alignment pattern by the bonding device and increasing the alignment window in bonding process. Moreover, the bonding alignment mark is formed by a point array, thereby facilitating integration of the process for forming the bonding alignment mark with the bonding hole process and avoiding defects such as the dishing phenomenon in the manufacturing process.

Abstract: A method for improving wafer bonding strength includes: Step S1: providing a silicon-based bonded wafer; Step S2: placing the bonded wafer in a microwave generating chamber; Step S3: raising the temperature in the microwave generating chamber and maintaining the temperature at a preset threshold by microwave heating; Step S4: after the bonded wafer reaches a predetermined temperature for a predetermined time period, shutting down the microwave power; and Step S5: cooling the bonded wafer. The present invention method can prevent waste of energy in the case of heating a small number of bonded wafers, and avoid a time-consuming preheating process. Therefore, the disclosed method is time-efficient and high-performance.