Abstract: A monolithically and heterogeneously integrated micro-light-emitting diode (microLED) display chip includes the following parts from bottom to top: an LED epitaxial wafer, an isolation layer, a two-dimensional (2D) thin-film transistor (TFT) drive array. The LED epitaxial wafer is provided with a microLED column display array. The 2D TFT drive array is connected to the microLED column display array through a metal column array. A top-gate field-effect transistor (FET) or a back-gate FET is used as a 2D TFT. A channel layer of the 2D TFT is made of a 2D layered material. The vertical monolithic heterogeneous integration is achieved through a drive circuit defined by a microLED column array on the epitaxial wafer and the 2D TFT matrix. A preparation method of the monolithically and heterogeneously integrated microLED display chip is provided.