Abstract: An equipment is for manufacturing nitrogen-doped monocrystalline silicon. The equipment includes a quartz crucible, the quartz crucible being used for accommodating a nitrogen-doped silicon melt; a first gas-conveying apparatus, the first gas-conveying apparatus being used for conveying a carbon monoxide gas onto a liquid surface of the nitrogen-doped silicon melt; and a crystal pulling apparatus, the crystal pulling apparatus being used for pulling a monocrystalline silicon ingot with the nitrogen-doped silicon melt by a Czochralski method.

Abstract: A license plate classification method, a license plate classification apparatus and a computer-readable storage medium are provided. The method includes: performing a license plate recognition process on a first license plate image to obtain a license plate recognition result; performing an encoding process on the license plate recognition result to obtain a first license plate feature; performing a feature extraction process on the first license plate image to obtain a second license plate feature; and processing the first license plate feature and the second license plate feature through a classification network to obtain a first license plate classification result. In this way, an accuracy of license plate classification is improved.

Abstract: The present disclosure discloses a crystal puller, a method for manufacturing a monocrystalline silicon ingot and a mono-crystalline silicon ingot. The crystal puller includes a pulling mechanism; a first heat treater which is configured to perform heat treatment on the mono-crystalline silicon ingot with a first heat treatment temperature at which BMD in the mono-crystalline silicon ingot be ablated; and a second heat treater which is configured to perform heat treatment on the monocrystalline silicon ingot with a second heat treatment temperature at which formation of BMD in the mono-crystalline silicon ingot is induced. The pulling mechanism is further configured to move the monocrystalline ingot along the direction of crystal growth to a position where heat treatment is performed on a tail section by the first heat treater and heat treatment is performed on a head section by the second heat treater.

Abstract: Embodiments of the present disclosure disclose a crystal puller for pulling a monocrystalline silicon ingot comprising a heater configured with a heat treatment chamber. The heater is arranged in the crystal puller such that the monocrystalline silicon ingot is accessible to the heat treatment chamber by moving along a direction of crystal growth.