Patents by Inventor Wanyi Nie

Wanyi Nie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11681059
    Abstract: A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: June 20, 2023
    Assignee: TRIAD NATIONAL SECURITY, LLC
    Inventors: Hsinhan Tsai, Wanyi Nie
  • Patent number: 10770239
    Abstract: A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: September 8, 2020
    Assignee: TRIAD NATIONAL SECURITY, LLC
    Inventors: Aditya Mohite, Hsinhan Tsai, Wanyi Nie, Mercouri Kanatzidis, Konstantinos Stoumpos
  • Publication number: 20180006254
    Abstract: Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.
    Type: Application
    Filed: December 23, 2015
    Publication date: January 4, 2018
    Inventors: Aditya Mohite, Gautam Gupta, Hsing-Lin Wang, Wanyi Nie