Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm?3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 ?m. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm?3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 ?m. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.

Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm?3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.

Abstract: Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.

Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm?3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.

Abstract: Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.

Abstract: A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones.

Abstract: A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones.

Abstract: A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones.