Abstract: A metal oxide semiconductor (MOS) varactor device has a source and a drain connected to each other, and a back gate, electrically separate from the source and drain, which is connected to a circuit common mode point.

Abstract: An integrated circuit (IC) includes a variable gain high frequency low noise amplifier (LNA) that receives a high frequency input signal and comprises a variable gain amplifier and a filter. The variable gain amplifier receives gain control signals that set the amount of gain applied to the input signal to create an amplifier output signal. The filter comprises passive components including inductors, capacitors and resistors. The filter also includes parasitic inductances provided by package leads and bond leads/wires. The variable gain amplifier includes a current steering mechanism that is responsive to the gain control signals, and sets the desired amplifier gain in response to the control signals by steering the input signal between a load and the filter. The filter is constructed from package leads, bond wires and dedicated on-chip components that overcome the lack of a precise on-chip RF ground to provide the requisite isolation between the input signal and the amplifier output signal.

Abstract: An integrated circuit (IC) includes a variable gain high frequency low noise amplifier (LNA) that receives a high frequency input signal and comprises a variable gain amplifier and a filter. The variable gain amplifier receives gain control signals that set the amount of gain applied to the input signal to create an amplifier output signal. The filter comprises passive components including inductors, capacitors and resistors. The filter also includes parasitic inductances provided by package leads and bond leads/wires. The variable gain amplifier includes a current steering mechanism that is responsive to the gain control signals, and sets the desired amplifier gain in response to the control signals by steering the input signal between a load and the filter. The filter is constructed from package leads, bond wires and dedicated on-chip components that overcome the lack of a precise on-chip RF ground to provide the requisite isolation between the input signal and the amplifier output signal.

Abstract: A double balun circuit is provided by connecting two pairs of circut types. The first circuit, a distributed divider circuit, includes first and second pluralities of field effect transistors, a common input transmission line, and a first and second output transmission lines. The common input transmission line is disposed to successively couple the input electrodes of each transistor of both the first and second pluralities of transistors. The output lines are disposed to successively couple the output electrodes of the respective ones of the plurities of transistors. Each output transmission line is coupled to one of the pair of output terminals of the circuit.

Abstract: A frequency conversion circuit having first and second input signal terminals, and first and second output terminals includes a plurality of non-linear elements, each one having a pair of input electrodes and an output electrode. The first input electrode of each non-linear element is successively interconnected by a two port input coupling means, said input coupling means having a first end coupled to the first input signal terminal and a second end terminated in a terminating impedance. The output electrode of each non-linear device is successively interconnected by a two port output coupling means coupled between the pair of output terminals. An input signal is fed to the first input signal terminal and is coupled to the input coupling means and a portion of such signal is fed to the first input electrode of each non-linear device. Each portion of the input signal is provided with a successive phase shift as it propagates along the input coupling means.