Abstract: A system for managing memory input/output management is provided herein. The system may include a processor and a memory storing machine-readable instructions that when executed by the processor, cause the system to perform operations including receiving read requests for first data stored on a solid-state storage drive, receiving write requests for second data to be stored on the storage drive, placing at least some of the read requests in a first queue, placing at least some of the write requests in a second queue, the second queue having a size limit, processing data at a disk driver layer from the first queue and the second queue in a manner such that selection of a request from either queue is biased towards the first queue. Associated methods are also included.

Abstract: A system for managing memory input/output management is provided herein. The system may include a processor and a memory storing machine-readable instructions that when executed by the processor, cause the system to perform operations including receiving read requests for first data stored on a solid-state storage drive, receiving write requests for second data to be stored on the storage drive, placing at least some of the read requests in a first queue, placing at least some of the write requests in a second queue, the second queue having a size limit, processing data at a disk driver layer from the first queue and the second queue in a manner such that selection of a request from either queue is biased towards the first queue. Associated methods are also included.

Abstract: A storage controller is configured to determine a reliability metric of a storage division of a solid-state storage medium based on one or more test read operations. The storage division may be retired based on the reliability metric and/or the age of the data on the storage division. A storage division comprising aged data may be marked for post-write reliability testing, which may comprise determining a post-write reliability metric in response to grooming and/or reprogramming the storage division. The storage controller may project the reliability metric of the storage division to the end of a predetermined data retention period. Portions of a storage divisions that exhibit poor reliability may be removed to improve the reliability of the storage division without taking the entire storage division out of service.

Abstract: A storage controller may be configured to assess the reliability of a solid-state storage medium. The storage controller may be further configured to project, forecast, and/or estimate storage reliability at a future time. The projection may be based on a currently reliability metric of the storage and a reliability model. The portions or sections of the solid-state storage media may be retired in response the projected reliability metric failing to satisfy a reliability threshold. The reliability threshold may be based on data correction and/or reconstruction characteristics. The projected reliability metrics of a plurality of erase blocks of a storage division may be combined, and one or more of the erase blocks may be retired in response to determining that the combined reliability metric projection fails to satisfy the reliability threshold.

Abstract: Apparatuses, systems, and methods are disclosed for managing non-volatile a medium. A method includes determining whether a first error correcting code (ECC) code word of a non-volatile storage device is correctable using a first error correcting code. A method includes determining whether a second ECC code word is correctable using a second error correcting code in response to determining that a first ECC code word is uncorrectable using a first error correcting code. A method includes adjusting one or more media parameters for accessing a non-volatile medium of a non-volatile storage device based on error information. Error information may include information from a decoder for a second error correcting code. Adjusting one or more media parameters may be in response to determining that a second ECC code word is correctable using a second error correcting code.

Abstract: Apparatuses, systems, and methods are disclosed for managing non-volatile a medium. A method includes determining whether a first error correcting code (ECC) code word of a non-volatile storage device is correctable using a first error correcting code. A method includes determining whether a second ECC code word is correctable using a second error correcting code in response to determining that a first ECC code word is uncorrectable using a first error correcting code. A method includes adjusting one or more media parameters for accessing a non-volatile medium of a non-volatile storage device based on error information. Error information may include information from a decoder for a second error correcting code. Adjusting one or more media parameters may be in response to determining that a second ECC code word is correctable using a second error correcting code.

Abstract: An apparatus, system, and method are disclosed for accessing non-volatile cells. An interface module is configured to receive data for storage on a non-volatile memory medium. The non-volatile memory medium includes an array of cells, and each cell encodes a non-power-of-two number of states, or abodes per cell. A base conversion module is configured to convert the data from a binary representation to a representation in a non-binary base. The non-binary base uses a number of unique digits equal to the non-power-of-two number of abodes per cell. A write module is configured to store the converted data to the array of cells.

Abstract: A method for adaptive voltage range management in non-volatile memory is described. The method includes establishing an adaptive voltage range for a memory element of an electronic memory device. The memory element includes at least two states. The adaptive voltage range comprises a lower state and an upper state. The method also includes establishing an adjustment process to implement a first adjustment of an abode characteristic of a first state and to implement a second adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event, wherein the first adjustment of an abode characteristic of the first state is different from the second adjustment of an abode characteristic of the second state.

Abstract: A method for adaptive voltage range management in non-volatile memory is described. The method includes establishing an adaptive voltage range for a memory element of an electronic memory device. The memory element includes at least two states. The adaptive voltage range comprises a lower state and an upper state. The method also includes establishing an adjustment process to implement a first adjustment of an abode characteristic of a first state and to implement a second adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event, wherein the first adjustment of an abode characteristic of the first state is different from the second adjustment of an abode characteristic of the second state.

Abstract: A storage controller may be configured to assess the reliability of a solid-state storage medium. The storage controller may be further configured to project, forecast, and/or estimate storage reliability at a future time. The projection may be based on a currently reliability metric of the storage and a reliability model. The portions or sections of the solid-state storage media may be retired in response the projected reliability metric failing to satisfy a reliability threshold. The reliability threshold may be based on data correction and/or reconstruction characteristics. The projected reliability metrics of a plurality of erase blocks of a storage division may be combined, and one or more of the erase blocks may be retired in response to determining that the combined reliability metric projection fails to satisfy the reliability threshold.

Abstract: A storage controller is configured to determine a reliability metric of a storage division of a solid-state storage medium based on one or more test read operations. The storage division may be retired based on the reliability metric and/or the age of the data on the storage division. A storage division comprising aged data may be marked for post-write reliability testing, which may comprise determining a post-write reliability metric in response to grooming and/or reprogramming the storage division. The storage controller may project the reliability metric of the storage division to the end of a predetermined data retention period. Portions of a storage divisions that exhibit poor reliability may be removed to improve the reliability of the storage division without taking the entire storage division out of service.