Abstract: Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.

Abstract: An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: We are able to reduce the average process bias in a patterned reticle by treating the developed, patterned photoresist which is used to transfer a pattern to the reticle with a silicon-containing reagent prior to the pattern transfer. The process bias is a measure of the difference between a nominal feature critical dimension (CD) produced in a patterned reticle and the nominal isofocal CD for the feature. Improvement of the average process bias is directly related to an improved resolution in the mask features. The reduction in average process bias achievable using the method of the invention typically ranges from about 30% to about 70%. This reduction in average process bias enables the printing of smaller features.

Abstract: We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: A coating is provided over a fresh layer of resist, such as a chemically amplified resist (CAR). The overcoat stabilizes process control and makes it possible to precoat the CAR on wafer or mask blanks some time prior to exposure.

Abstract: A software system written in a nonprocedural language for controlling a telecommunication system in which an internal software signal is generated when a state is exited and another internal signal is generated when a state is entered to control common operations for the state transitions. For each state, a group of instructions written in the nonprocedural language is autonomously executed in response to the exit signal to perform common exit operations for that particular state. A second group of instruction is autonomously executed in response to the entrance signal to perform common entrance operations for that particular state. Various services performed by the telecommunication system are written in scripts of groups of instructions called triples. Each triple has an event definition defining the signal that the triple will respond to and a state definition defining the state in which the system must be in before the triple can respond.

Abstract: A communication method and packet switching network in which self-routing packets are communicated through the network by intra-communication of the packets within stages of the network as well as inter-communication of the packets among stages. The stages each having a plurality of pairs of switch nodes with each pair having an intra-node link between the pair of nodes. Each of the switch nodes comprises input controllers and output controllers. The input controller of a node is responsive to the receipt of a packet for interrogating the address field of the packet to determine the destination of the packet. The input control on the basis of the destination determination commmunicates the packet towards the destination via either an inter-stage link or an intra-node link on the basis of availability of the links and an internal control circuit.

Abstract: A host computer system allowing the utilization of designated characters as flow control characters and also the utilization of the same designated characters as ordinary data. During the transfer of data from the host computer to the terminal, the operating system controlling the host computer first disables the use of the designated characters as flow control characters, starts the transfer of information to the terminal, performs operations to determine whether or not the terminal is approaching the point where it can no longer receive data, and enables the utilization of the designated characters as flow control characters when the terminal reaches the latter point. The enabling of the designated characters for use as flow control characters allows the terminal to signal to the computer when it has received too much data and control the flow of data to the terminal using the designated flow control characters.

Abstract: A communication method and packet switching system in which packets comprising logical addresses and voice/data information are communicated through the system by packet switching networks which are interconnected by high-speed digital trunks with each of the latter being directly terminated on both ends by trunk controllers. During initial call setup of a particular call, central processors associated with each network in the desired route store the necessary logical to physical address information in the controllers which perform all logical to physical address translations on packets of the call. Each network comprises stages of switching nodes which are responsive to the physical address associated with a packet by a controller to communicate this packet to a designated subsequent node. The nodes provide for variable packet buffering, packet address rotation techniques, and intranode and internode signaling protocols.

Abstract: A communication method and switching system in which voice and data signals are communicated through the system by a programmed controlled switching processor. The switching processor reads these signals from an input memory where they were transferred from telephone stations and data terminals by a scanner. The voice and data signals are transmitted to telephone stations and data terminals by the switching processor storing these signals in an output memory from which they are retransmitted by a distributor to the telephone stations and data terminals. The intelligent processor reads data signals from the input memory and assembles these signals into data packets which are temporarily stored in the data memory. Subsequently, the intelligent processor transmits these data packets by storing the data signals in the output memory.