Patents by Inventor Warren Chiang

Warren Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming a planar diode using one mask
    Patent number: 9537017
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: January 3, 2017
    Assignee: VISHAY GENERAL SEMICONDUCTOR LLC
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen
  • PROCESS FOR FORMING A PLANAR DIODE USING ONE MASK
    Publication number: 20150179824
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Application
    Filed: January 29, 2015
    Publication date: June 25, 2015
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen
  • Process for forming a planar diode using one mask
    Patent number: 8975719
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: March 10, 2015
    Assignee: Vishay General Semiconductor LLC
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen
  • PROCESS FOR FORMING A PLANAR DIODE USING ONE MASK
    Publication number: 20130313684
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Application
    Filed: August 2, 2013
    Publication date: November 28, 2013
    Applicant: VISHAY GENERAL SEMICONDUCTOR LLC
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen
  • Process for forming a planar diode using one mask
    Patent number: 8525222
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: September 3, 2013
    Assignee: Vishay General Semiconductor LLC
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen
  • Process for forming a planar diode using one mask
    Publication number: 20060214184
    Abstract: A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
    Type: Application
    Filed: March 25, 2005
    Publication date: September 28, 2006
    Inventors: Benson Wang, Kevin Lu, Warren Chiang, Max Chen