Abstract: Metal alloys including platinum are disclosed. The alloys have a similar variety of applications to platinum-based alloys. The alloy with a solid solution matrix consisting of: Platinum (Pt) 20 to 70 at. %; Palladium (Pd)>0 to 70 at. %; Cobalt (Co)>0 to 50 at. % and at least one of: Nickel (Ni) up to 50 at. %; Chromium (Cr) up to 50 at. % and Iron up to 50 at. %.

Abstract: The present invention relates to matter alloys including copper.

Abstract: Described herein is a method of producing energy by proton-boron nuclear fusion, comprising non-thermally igniting a boron nitride nanomaterial (nBN) target by use of a laser emitting a laser beam, wherein the nBN comprises hydrogen. Also described herein is a system for conducting non-thermal ignition proton-boron nuclear fusion, comprising a target comprising hydrogen in a boron nitride nanomaterial (nBN) matrix and a laser positioned to irradiate the target and thereby initiate a nuclear fusion reaction.

Abstract: The present invention relates to matter alloys including copper.

Abstract: Metal alloys including platinum are disclosed. The alloys have a similar variety of applications to platinum-based alloys. The alloy with a solid solution matrix consisting of: Platinum (Pt) 20 to 70 at. %; Palladium (Pd)>0 to 70 at. %; Cobalt (Co)>0 to 50 at. % and at least one of: Nickel (Ni) up to 50 at. %; Chromium (Cr) up to 50 at. % and Iron up to 50 at. %.

Abstract: The present invention relates to metal alloys including copper.

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch.

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch.