Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Some embodiments of the invention accurately account for power dissipation in memory systems that include individual memory modules by keeping track of the number of read requests, the number of write requests, and the number of activate requests that are applied to the individual memory modules during selected time periods. If the sum of these totals exceeds a threshold level, the embodiments throttle the memory system, either by throttling the entire memory system based in response to the most active memory module, or by throttling individual memory modules as needed. Other embodiments of the invention may assign the same or different weights to activate requests, read requests, and write requests. Other embodiments are described and claimed.

Abstract: An optical bus interconnects two or more processors in a multiprocessor system. One or more electrical-to-optical (“E-O”) transmitters are optically coupled to the optical bus using optical couplers. The E-O transmitters receive electrical signals from the processors and convert the electrical signals to optical signals to be guided onto the optical bus. Optical-to-electrical (“O-E”) receivers are also coupled to the optical bus using the optical couplers. The O-E receivers receive optical signals from the optical bus and convert the optical signals to electrical signals for the processors.

Abstract: In some embodiments, a memory controller includes first and second memory channel interfaces and memory access control circuitry. The memory access control circuitry is to send first and second primary data sections to the first and second memory channel interfaces, respectively, and send first and second redundant data sections to the second and first memory channel interfaces, respectively. The first and second redundant data sections are redundant with respect to the first and second primary data sections, respectively. Other embodiments are described and claimed.

Abstract: Embodiments of the present invention include an integrated circuit to communicate with a memory device. The integrated circuit includes an optical transmitter and an optical bus coupled to the integrated circuit's optical transmitter. N optical receivers are coupled to the optical bus via N optical couplers. N memory modules are coupled to the N optical receivers. M memory devices are coupled to the N memory modules. The optical transmitter converts a signal to communicate with the N memory modules from an electrical signal to an optical signal. The optical bus propagates the optical signal. Each of the N optical couplers to couple a one-Nth of the optical signal from the optical bus to each one of the N optical receivers, each of the N optical receivers converts its one-Nth of the optical signal to an electrical signal for its associated memory device.