Patents by Inventor Warren O. Groves

Warren O. Groves has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial deposition of III-V compounds containing isoelectronic impurities
    Patent number: 4001056
    Abstract: The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
    Type: Grant
    Filed: November 11, 1974
    Date of Patent: January 4, 1977
    Assignee: Monsanto Company
    Inventors: Warren O. Groves, Arnold S. Epstein
  • Gallium phosphide light-emitting diodes
    Patent number: 3931631
    Abstract: The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
    Type: Grant
    Filed: April 1, 1974
    Date of Patent: January 6, 1976
    Assignee: Monsanto Company
    Inventors: Warren O. Groves, Arnold S. Epstein
  • Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities
    Patent number: RE29648
    Abstract: The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
    Type: Grant
    Filed: March 7, 1977
    Date of Patent: May 30, 1978
    Assignee: Monsanto
    Inventors: Warren O. Groves, Arno H. Herzog, Magnus G. Craford
  • GaAs.sub.1-x P.sub.x electroluminescent device doped with isoelectronic impurities
    Patent number: RE29845
    Abstract: The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
    Type: Grant
    Filed: March 7, 1977
    Date of Patent: November 21, 1978
    Assignee: Monsanto Company
    Inventors: Warren O. Groves, Arno H. Herzog, Magnus G. Craford