Abstract: An electrostatic discharge (ESD) protection technique protects a semiconductor device against electrostatic discharge events. The technique uses an ESD protection circuit that includes a two cascode-connected clamps between the protected pad and a reference voltage conductor and an level-shifting inverter amplifier for driving the clamps. A control signal used to control the amplifiers is derived from a nominal-voltage pad, but the voltage used to activate the transistor clamps is derived from the protected pad to achieve the greatest voltage drive on the cascoded clamps during ESD.

Abstract: A socket driver, and method of forming the same, is described in which longitudinal protuberances are provided on successive surfaces of the hexagonal cavity for receiving a bit driver. The protuberances create an interference fit with the driven end of the bit driver, the protuberances being so dimensioned that forceful insertion of the bit driver into the hexagonal cavity at least partially deflects the walls portions on which protuberances are formed to thereby slightly deflect the same. The resulting restoring forces create a spring action which semi-permanently secures the bit driver received within the socket driver.