Abstract: Critical dimension variation of photolithographically formed features on a semiconductor substrate is reduced by measuring the reflectivity of a photoresist layer and an underlying layer, such as a polysilicon layer, and adjusting the exposure level of the photoresist in accordance with the measured reflectivity. This allows precise control of feature width on the photoresist, which in turn allows precision etching of the underlying layer to accurately form a feature, such as a gate electrode.

Abstract: In order to improve the quality of a semiconductor product, mapping of the critical dimension of predetermined features such as ring oscillators, test transistors, turning forks WET transistors etc., is carried out at various stages of the process. For example, a reticle can be mapped, the etch mask which is produced from the effect of the image on the resist layer, and the results of the etching can be respectively mapped. The data gleaned from these mappings is used to determine from the end result if the reticle requires modification to change the resulting etch mask and modify the end product. Thus, when a new reticle is introduced to the process, it is possible to run the process and then work back via the collected critical dimension data to determined what changes in the reticle are appropriate in order to improve the end result.

Abstract: In order to optimize the speed performance of a microprocessor, mapping of the critical dimension of predetermined features, such as ring oscillators, test transistors, turning forks WET transistors etc., it carried out at various stages of the manufacturing process. For example, a reticle is mapped, the etch mask is produced from the effect of the image on the resist layer, and the results of the etching can be respectively mapped. The data gleaned from these mappings are use to determine from the end result, what stage or operation in a new manufacturing process which should be adjusted to improve the quality of the end product.

Abstract: In order to improve the quality of a semiconductor product, mapping of the critical dimension of predetermined features such as ring oscillators, test transistors, turning forks WET transistors etc., is carried out at various stages of the process. For example, a reticle is mapped, the etch mask which is produced from the effect of the image on the resist layer, and the results of the etching are respectively mapped. Using the data gleaned from these mappings, the stage or operation of a new manufacturing process is adjusted to improve the quality of the end product. Thus, when a new manufacturing process is introduced into production, it is possible to run the process and then work back via the collected critical dimension data to determined what changes in the settings of a manufacturing process, etching process, resist formulation or the like, are appropriate in order to improve the fabrication result.

Abstract: The life of a stepper is prolonged, while achieving a design L/S by changing the L/S values of a reticle with respect to the design L/S to facilitate printing. Etch bias is then conducted to vary etching so that the resulting L/S corresponds to the design L/S. In this way, the load on the stepper mechanism which moves the wafters about with respect to the optics in which the reticle is mounted is reduced.

Abstract: In order to improve the quality of a semiconductor product, mapping of the critical dimensions of predetermined features such as ring oscillators, test transistors, turning forks WET transistors etc., is carried out at various stages of the manufacturing process. For example, a reticle is mapped, the etch mask which is produced from the effect of the image on the resist layer, and the results of the etching are respectively mapped. Using the data gleaned from these mappings, it is determined if any of the control variables of a new etch process require adjustment to improve the quality of the end product. Therefore, when an etch process is introduced to the process, it is possible to run the diagnostic process and then work back via the collected critical dimension data to determine what changes in the control parameters are appropriate to improve the resulting product.

Abstract: In order to improve the quality of a semiconductor product, mapping of the critical dimension of predetermined features, such as ring oscillators, test transistors, turning forks WET transistors etc., is carried out at various stages of the manufacturing process. For example, a reticle can be mapped, the etch mask which is produced from the effect of the image on the resist layer, and the results of the etching can be respectively mapped. Using the data gleaned from these mappings it can be determined whether a new tool set including a stepper and/or a wafer track, should be adjusted to improve the quality of the end product. Thus, when a new tool set is introduced to a manufacturing process, it is possible to run the process and then work back via the collected critical dimension data to determined what changes in the settings of the tool set are appropriate to improve the resulting device.