Abstract: A process for forming stable integrated resistors (14) and capacitors (28) on organic substrates (12). The resistors (14) and capacitors (28) are capable of a wide range of resistance and capacitance values, yet can be processed in a manner that does not detrimentally effect the organic substrate (12) or entail complicated processing. The method generally entails the use of thick-film materials usually of the types used to form resistors and capacitors on ceramic substrates. The thick-film materials are applied to an electrically-conductive foil (20) and then heated to bond the thick-film material to the foil (20) and form a solid resistive or capacitive mass (16/30). The foil (20) is then laminated to an organic substrate (12), such that the resistive/capacitive mass (16/30) is attached to and preferably embedded in the organic substrate (12).

Abstract: A hybrid circuit structure that includes a metal substrate, an inorganic electrical insulator layer and at least one inorganic thick-film passive circuit element, such as a thick-film resistor, capacitor or conductor. An interface layer is provided between the insulator layer and the circuit element to prevent the detrimental effects of interlayer diffusion. The composition of the interface layer is selected to prevent the diffusion of constituents from the inorganic insulator layer, and to have a CTE near that of the circuit element to reduce thermal fatigue. As a result, the passive circuit element can be formed of essentially any one of a number of conventional inorganic thick-film materials that are widely used on alumina substrates.

Abstract: A method for forming a ruthenium-based thick-film resistor having copper terminations, in which the thick-film resistor is fired in a non-oxidizing atmosphere so as not to oxidize the copper terminations yet without reducing the thick-film resistor to metallic ruthenium. A ruthenium-based thick-film resistor ink having a matrix material and an organic vehicle is deposited on a copper layer that will form the terminations for the thick-film resistor formed by firing the ink. The organic vehicle of the ink is then burned out at a temperature of less than 350° C. in an oxidizing atmosphere, such as air. Thereafter, the ink is fired in a non-oxidizing atmosphere (e.g., nitrogen) at a temperature sufficient to sinter the matrix material and yield a ruthenium-based thick-film resistor with copper terminations formed by the copper layer.